Self-aligned heater for pcram using a continuous dielectric

A structure comprising:

• a plurality of memory cells aligned to a row, wherein the plurality of memory cells comprise a first memory cell and a second memory cell, and wherein the plurality of memory cells comprise:
• a bottom electrode;
• a dielectric layer over the bottom electrode;
• a conductive filament in the dielectric layer;
• and
• a Phase-Change Random Access Memory (PCRAM) region electrically connected to the conductive filament, wherein a first portion of the dielectric layer in the first memory cell and a second portion of the dielectric layer in the second memory cell are parts of a continuous portion of the dielectric layer, and wherein the continuous portion of the dielectric layer continuously extends laterally beyond a combined region that comprises the first memory cell and the second memory cell;
• and
• a top electrode, wherein the PCRAM region is between, and is vertically aligned to the bottom electrode and the top electrode.

A structure comprising:

• a plurality of bottom electrodes;
• a dielectric layer over and contacting all of the plurality of bottom electrodes;
• a plurality of chalcogenide semiconductor regions physically contacting the dielectric layer, wherein the dielectric layer comprises:
• first portions overlapped by the plurality of chalcogenide semiconductor regions;
• and
• second portions interconnecting the first portions and vertically misaligned from the plurality of chalcogenide semiconductor regions, wherein the first portions are thicker than the second portions;
• and
• a plurality of top electrodes overlying the plurality of chalcogenide semiconductor regions.