G11C 11/2273
Reading or sensing circuits or methods
Official title: {Reading or sensing circuits or methods}
G11C11/2273 (Reading or sensing circuits or methods) appears on 1,053 US grants and 1,122 published applications in this corpus.
Search patents in G11C- Granted patents
- 1,053
- Published applications
- 1,122
- Assignees
- 149
- Inventors
- 1,042
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1999 | 1 | 0 |
| 2000 | 1 | 0 |
| 2001 | 0 | 0 |
| 2002 | 0 | 0 |
| 2003 | 0 | 1 |
| 2004 | 0 | 3 |
| 2005 | 3 | 1 |
| 2006 | 2 | 0 |
| 2007 | 0 | 0 |
| 2008 | 0 | 1 |
| 2009 | 0 | 1 |
| 2010 | 1 | 0 |
| 2011 | 0 | 0 |
| 2012 | 2 | 6 |
| 2013 | 2 | 4 |
| 2014 | 7 | 7 |
| 2015 | 6 | 11 |
| 2016 | 20 | 22 |
| 2017 | 41 | 59 |
| 2018 | 75 | 86 |
| 2019 | 108 | 120 |
| 2020 | 116 | 143 |
| 2021 | 134 | 130 |
| 2022 | 135 | 134 |
| 2023 | 127 | 110 |
| 2024 | 118 | 103 |
| 2025 | 93 | 91 |
| 2026 | 61 | 89 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Ferroelectric memory architecture with gap region6 Oct 2026US 12,757,408 B2Micron Technology, Inc.
- Semiconductor memory device and method for controlling semiconductor memory device15 Sep 2026US 12,738,308 B2Ramxeed Limited
- Ferroelectric in-memory computing1 Sep 2026US 12,725,646 B2International Business Machines Corporation
- Non-linear polar material based multi-capacitor bit-cell with shared gain element and access transistor25 Aug 2026US 12,718,860 B2Kepler Computing Inc.
- Memory cell arrangement and method of reading a capacitive memory cell25 Aug 2026US 12,718,861 B2Ferroelectric Memory GmbH
- Bank configurable power modes24 Sep 2026US 2026/0288225 A1Micron Technology, Inc.
- Memory device, operating method thereof, and memory system24 Sep 2026US 2026/0290420 A1Yangtze Memory Technologies Co., Ltd.
- Memory devices, operating methods thereof and memory systems24 Sep 2026US 2026/0290421 A1Yangtze Memory Technologies Holding Co., Ltd.
- Inductive energy harvesting and signal development for a memory device17 Sep 2026US 2026/0279416 A1Micron Technology, Inc.
- Ferroelectric memory devices and operation methods thereof17 Sep 2026US 2026/0279426 A1Yangtze Memory Technologies Co., Ltd.
Most cited
By later US patents
- Detecting location within a network168US 10,397,742 B2Ivani, LLC · 2019
- Ferroelectric memory cell recovery113US 9,697,913 B1Micron Technology, Inc. · 2017
- Detecting location within a network105US 9,474,042 B1Ivani, LLC · 2016
- Analog ferroelectric memory with improved temperature range95US 9,697,882 B1Radiant Technologies, Inc. · 2017
- Reprogrammable non-volatile ferroelectric latch for use with a memory controller95US 9,858,979 B1Micron Technology, Inc. · 2018