G03F 7/427
Using plasma means only
Official title: {using plasma means only}
G03F7/427 (Using plasma means only) appears on 381 US grants and 433 published applications in this corpus.
Search patents in G03F- Granted patents
- 381
- Published applications
- 433
- Assignees
- 165
- Inventors
- 1,128
- Latest grant
- 9 Jun 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 2 | 0 |
| 1977 | 0 | 0 |
| 1978 | 0 | 0 |
| 1979 | 0 | 0 |
| 1980 | 1 | 0 |
| 1981 | 1 | 0 |
| 1982 | 2 | 0 |
| 1983 | 1 | 0 |
| 1984 | 1 | 0 |
| 1985 | 1 | 0 |
| 1986 | 0 | 0 |
| 1987 | 1 | 0 |
| 1988 | 2 | 0 |
| 1989 | 3 | 0 |
| 1990 | 5 | 0 |
| 1991 | 3 | 0 |
| 1992 | 1 | 0 |
| 1993 | 7 | 0 |
| 1994 | 3 | 0 |
| 1995 | 3 | 0 |
| 1996 | 2 | 0 |
| 1997 | 4 | 0 |
| 1998 | 7 | 0 |
| 1999 | 8 | 0 |
| 2000 | 9 | 0 |
| 2001 | 18 | 9 |
| 2002 | 29 | 25 |
| 2003 | 22 | 23 |
| 2004 | 25 | 27 |
| 2005 | 9 | 26 |
| 2006 | 10 | 46 |
| 2007 | 21 | 35 |
| 2008 | 16 | 28 |
| 2009 | 14 | 14 |
| 2010 | 14 | 20 |
| 2011 | 10 | 13 |
| 2012 | 13 | 11 |
| 2013 | 9 | 7 |
| 2014 | 6 | 8 |
| 2015 | 3 | 13 |
| 2016 | 8 | 4 |
| 2017 | 7 | 8 |
| 2018 | 6 | 15 |
| 2019 | 7 | 10 |
| 2020 | 9 | 14 |
| 2021 | 10 | 13 |
| 2022 | 10 | 16 |
| 2023 | 6 | 20 |
| 2024 | 12 | 10 |
| 2025 | 14 | 12 |
| 2026 | 6 | 6 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Method of manufacturing semiconductor device9 Jun 2026US 12,653,002 B2Samsung Electronics Co., Ltd.
- Method and device for locally removing and/or modifying a polymer material on a surface28 Apr 2026US 12,612,305 B2Robert Bosch GmbH
- Substrate processing apparatus and method thereof24 Mar 2026US 12,588,452 B2Samsung Electronics Co., Ltd.
- Substrate treating apparatus10 Feb 2026US 12,546,534 B2Semes Co., Ltd.
- Resist stripping method, resist stripping device, and pretreatment method10 Feb 2026US 12,547,079 B2Nomura Micro Science Co., Ltd.
- Development method for patterning metal oxide photoresist24 Sep 2026US 2026/0288010 A1Tokyo Electron Limited
- Method of manufacturing a semiconductor device9 Jul 2026US 2026/0198242 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Substrate processing method using low temperature developer and semiconductor device manufacturing apparatus using the same30 Apr 2026US 2026/0118770 A1Samsung Electronics Co., Ltd.
- Substrate processing method and substrate processing apparatus19 Mar 2026US 2026/0079393 A1Tokyo Electron Limited
- Substrate processing apparatus and method of manufacturing semiconductor device19 Mar 2026US 2026/0081115 A1Kokusai Electric Corporation
Most cited
By later US patents
- Gate linewidth tailoring and critical dimension control for sub-100 nm devices using plasma etching534US 6,864,041 B2International Business Machines Corporation · 2005
- Apparatus for removing organic resist from semiconductor485US 5,961,775 AFujitsu Limited · 1999
- Substrate cleaning apparatus and method369US 6,692,903 B2APPLIED Materials.Inc. · 2004
- Oxygen free plasma stripping process269US 6,281,135 B1Axcelis Technologies, Inc. · 2001
- Method for removing etching residues and contaminants259US 5,849,639 ALucent Technologies Inc. · 1998