Method of manufacturing semiconductor device
AssigneeSamsung Electronics Co., Ltd.
InventorsSungkun Kang, Chawon Koh, Hyunjae Lee, Tsunehiro Nishi
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Abstract
A method of manufacturing a semiconductor device, the method including forming a lower film on a substrate; forming a metal-containing photoresist material film on the lower film; patterning the metal-containing photoresist material film to form a photoresist pattern including openings therein such that a scum remains on the lower film; performing a descum operation to remove the scum from the lower film; and etching the lower film using the photoresist pattern, wherein performing the descum operation includes providing the substrate to a processing chamber; generating oxygen plasma; and reacting the scum with the oxygen plasma.
Claims20
A method of manufacturing a semiconductor device, the method comprising:
- forming a lower film on a substrate;
- forming a metal-containing photoresist material film on the lower film;
- patterning the metal-containing photoresist material film to form a photoresist pattern including openings therein such that a scum remains on the lower film, wherein the patterning includes developing the metal-containing photoresist material film using a developing solution;
- performing a descum operation to remove the scum from the lower film;
- and
- etching the lower film using the photoresist pattern,
- wherein performing the descum operation includes:
- providing the substrate to a processing chamber;
- generating oxygen plasma;
- and
- reacting the scum with the oxygen plasma.
A method of manufacturing a semiconductor device, the method comprising:
- forming a lower film on a substrate;
- forming a metal-containing photoresist material film on the lower film;
- patterning the metal-containing photoresist material film on the lower film to form a photoresist pattern including openings therein such that a scum remains on the lower film, wherein the patterning includes developing the metal-containing photoresist material film using a developing solution;
- performing a first descum operation of removing at least some of the scum from the lower film;
- performing a second descum operation of removing any residual scum from the lower film;
- and
- etching the lower film using the photoresist pattern,
- wherein performing the first descum operation includes:
- providing the substrate to a processing chamber;
- generating oxygen plasma;
- and
- reacting the scum with the oxygen plasma.
A method of manufacturing a semiconductor device, the method comprising:
- forming a lower film on a substrate;
- forming a metal-containing photoresist material film on the lower film;
- patterning the metal-containing photoresist material film on the lower film to form a metal-containing photoresist pattern including openings therein such that a scum remains on the lower film, wherein the patterning includes developing the metal-containing photoresist material film using a developing solution;
- performing a descum operation of removing the scum from the lower film;
- and
- plating a metal on the lower film using the metal-containing photoresist pattern,
- wherein:
- the lower film includes a metal seed layer, and
- performing the descum operation includes:
- providing the substrate to a processing chamber,
- generating oxygen plasma, and
- reacting the scum with the oxygen plasma.
Dependencies are inferred from the claim text.