G01R 31/261
For measuring break-down voltage or punch through voltage therefor
Official title: {for measuring break-down voltage or punch through voltage therefor}
G01R31/261 (For measuring break-down voltage or punch through voltage therefor) appears on 27 US grants and 22 published applications in this corpus.
Search patents in G01R- Granted patents
- 27
- Published applications
- 22
- Assignees
- 21
- Inventors
- 69
- Latest grant
- 30 Jul 2024
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 2 | 0 |
| 1977 | 1 | 0 |
| 1978 | 0 | 0 |
| 1979 | 0 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 1 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 1 | 0 |
| 1994 | 0 | 0 |
| 1995 | 1 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 1 | 0 |
| 2000 | 0 | 0 |
| 2001 | 1 | 0 |
| 2002 | 0 | 0 |
| 2003 | 0 | 0 |
| 2004 | 0 | 1 |
| 2005 | 1 | 0 |
| 2006 | 0 | 0 |
| 2007 | 0 | 0 |
| 2008 | 0 | 0 |
| 2009 | 0 | 0 |
| 2010 | 0 | 0 |
| 2011 | 0 | 1 |
| 2012 | 0 | 2 |
| 2013 | 0 | 1 |
| 2014 | 2 | 1 |
| 2015 | 2 | 3 |
| 2016 | 1 | 0 |
| 2017 | 3 | 0 |
| 2018 | 0 | 3 |
| 2019 | 1 | 0 |
| 2020 | 2 | 1 |
| 2021 | 0 | 0 |
| 2022 | 2 | 4 |
| 2023 | 2 | 3 |
| 2024 | 3 | 1 |
| 2025 | 0 | 1 |
By publication year. Applications have been published since 2001.
Recent patents
- Safety container for high power device testing over a range of temperatures30 Jul 2024US 12,050,243 B2Keithley Instruments, LLC
- Gate detection circuit of insulated gate bipolar transistor25 Jun 2024US 12,019,115 B2Great Wall Motor Company Limited
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- Serial IGBT voltage equalization method and system based on auxiliary voltage source18 Jul 2023US 11,705,899 B2Wuhan University
- Semiconductor test apparatus and semiconductor test method11 Apr 2023US 11,624,767 B2Mitsubishi Electric Corporation
- Test circuit and testing method17 Apr 2025US 2025/0123317 A1Fuji Electric Co., Ltd.
- Engageable Electric Connector for Supplemental Electric Circuit31 Oct 2024US 2024/0361364 A1
- Manufacturing method of semiconductor device, method of testing the semiconductor device and wafer holding member21 Dec 2023US 2023/0411200 A1Renesas Electronics Corporation
- Gate detection circuit of insulated gate bipolar transistor25 May 2023US 2023/0160945 A1Great Wall Motor Company Limited
- Test method13 Apr 2023US 2023/0113109 A1Fuji Electric Co., Ltd.
Most cited
By later US patents
- Non-destructive tester for transistors12US 4,851,769 AVirginia Tech Intellectual Properties, Inc. · 1989
- Transistor testing circuit11US 3,979,672 ARCA Corporation · 1976
- Breakdown evaluating test element9US 5,179,433 AKabushiki Kaisha Toshiba · 1993
- High speed, large-current power control circuit5US 5,455,502 ASony/Tektronix Corporation · 1995
- Time dependent dielectric breakdown (TDDB) test structure of semiconductor device and method of performing TDDB test using the same4US 8,680,883 B2Samsung Electronics Co., Ltd. · 2014