Time dependent dielectric breakdown (TDDB) test structure of semiconductor device and method of performing TDDB test using the same
AssigneeSamsung Electronics Co., Ltd.
InventorsYong-sang Cho, Jang-hyuk An, Ihl-hwa Moon, Jae-young Lee, Kyung-hwan Kim
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Abstract
A time dependent dielectric breakdown (TDDB) test structure of a semiconductor device includes: a first test cell having a first test pattern in which a dielectric layer is formed between two electrodes; a second test cell spaced apart from the first test cell and having a second test pattern in which a dielectric layer is formed between two electrodes; and a barrier region configured to prevent electrical interference from occurring between the first test cell and the second test cell during a TDDB test.
Claims16
A method of performing a time dependent dielectric breakdown (TDDB) test of a semiconductor device, the method comprising:
- preparing a TDDB test structure of a semiconductor device including a plurality of test cells having test patterns in which two electrodes are formed having a dielectric layer therebetween;
- applying a measurement voltage to each of test cells selected from the plurality of test cells and measuring first leakage current values;
- simultaneously applying a stress voltage to the selected test cells;
- applying the measurement voltage to each of the test cells to which the stress voltage has been applied and measuring second leakage current values;
- repeatedly performing the operations of the simultaneously applying of the stress voltage and applying the measurement voltage to measure a plurality of second leakage current values;
- and
- determining a TDDB value of a dielectric layer included in each of the selected test cells based on differences between the first and second leakage current values measured in the selected test cells.
A test device for a semiconductor device associated with a semiconductor substrate, the test device comprising:
- at least first and second test cells separated and spaced apart from each other, each of the first and second test cells including first electrode, a second electrode, and a dielectric material disposed between the first and second electrodes;
- a switching device connected to each of the first and second test cells and configured to simultaneously apply a first stress voltage to the first test cell and a second test voltage to the second test cell to perform tests of a breakdown characteristic of the dielectric material of the first test cell and a breakdown characteristic of the dielectric material of the second test cell;
- and
- at least one barrier region disposed between the first and second test cells, the barrier region having a characteristic that prevents the tests of the breakdown characteristics of the dielectric materials of the first and second test cells from interfering with each other,
- wherein the barrier region includes a well disposed in the semiconductor substrate.
Dependencies are inferred from the claim text.