Test method

A test method of a semiconductor device, the test method comprising:

• preparing a plurality of groups for setting, each of which has a plurality of semiconductor devices for setting, and assigning an inspection voltage to each of the plurality of groups for setting, wherein the inspection voltages assigned to the plurality of groups are different from each other;
• performing first testing by applying the assigned inspection voltage to the plurality of semiconductor devices for setting included in each of the plurality of groups for setting, and testing, at a first temperature, the plurality of semiconductor devices for setting included in each of the plurality of groups for setting;
• performing second testing by testing, at a second temperature different from the first temperature, a selected one of the plurality of the semiconductor devices for setting having been determined as being non-defective in the performing the first testing and by detecting a breakdown voltage at which the selected one of the plurality of semiconductor devices for setting is broken;
• acquiring a relationship between the inspection voltage and the breakdown voltage in each of the plurality of groups for setting;
• and
• setting an applied voltage used when testing a semiconductor device under test at the first temperature, based on the relationship acquired in the acquiring the relationship, the semiconductor device under test separate from ones of the plurality of semiconductor devices for setting.