Gate detection circuit of insulated gate bipolar transistor

A method for gate detection of an insulated gate bipolar transistor, comprising:

• shaping a input signal of a signal input device through a pulse shaping circuit, and outputting a first square wave signal of a high level and a second square wave signal of a low level when the input signal is at the high level;
• and outputting a first square wave signal of the low level and a second square wave signal of the high level when the input signal is at the low level;
• comparing, through a comparison circuit, a first preset voltage with a voltage of a gate of the insulated gate bipolar transistor when the first square wave signal is at the high level, and outputting a low level when the first preset voltage is greater than the voltage of the gate of the insulated gate bipolar transistor;
• and comparing, through the comparison circuit, a second preset voltage with a voltage of a gate of the insulated gate bipolar transistor when the second square wave signal is at the high level, and outputting a low level when the second preset voltage is lower than the voltage of the gate of the insulated gate bipolar transistor;
• and
• outputting, through a fault output circuit, a gate fault signal when the comparison circuit outputs the low level.

An electric vehicle, comprising a gate detection circuit of an insulated gate bipolar transistor, wherein the gate detection circuit comprises:

• a pulse shaping circuit, configured for shaping an input signal of a signal input device, and
• outputting a first square wave signal of a high level and a second square wave signal of a low level when the input signal is at the high level;
• and
• outputting a first square wave signal of the low level and a second square wave signal of the high level when the input signal is at the low level;
• a comparison circuit, configured for:
• comparing a first preset voltage with a voltage of a gate of the insulated gate bipolar transistor when the first square wave signal is at the high level, and outputting a low level when the first preset voltage is greater than the voltage of the gate of the insulated gate bipolar transistor;
• and
• comparing a second preset voltage with a voltage of a gate of the insulated gate bipolar transistor when the second square wave signal is at the high level, and outputting a low level when the second preset voltage is lower than the voltage of the gate of the insulated gate bipolar transistor;
• and
• a fault output circuit, configured for outputting a gate fault signal when the comparison circuit outputs the low level.