G01N 23/20058
Measuring diffraction of electrons
Official title: Measuring diffraction of electrons, e.g. low energy electron diffraction [LEED] method or reflection high energy electron diffraction [RHEED] method
G01N23/20058 (Measuring diffraction of electrons) appears on 95 US grants and 115 published applications in this corpus.
Search patents in G01N- Granted patents
- 95
- Published applications
- 115
- Assignees
- 84
- Inventors
- 288
- Latest grant
- 14 Jul 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1990 | 1 | 0 |
| 1991 | 0 | 0 |
| 1992 | 2 | 0 |
| 1993 | 0 | 0 |
| 1994 | 1 | 0 |
| 1995 | 0 | 0 |
| 1996 | 1 | 0 |
| 1997 | 0 | 0 |
| 1998 | 1 | 0 |
| 1999 | 0 | 0 |
| 2000 | 0 | 0 |
| 2001 | 1 | 0 |
| 2002 | 0 | 0 |
| 2003 | 0 | 0 |
| 2004 | 0 | 1 |
| 2005 | 0 | 0 |
| 2006 | 1 | 1 |
| 2007 | 0 | 2 |
| 2008 | 2 | 2 |
| 2009 | 1 | 1 |
| 2010 | 1 | 0 |
| 2011 | 1 | 4 |
| 2012 | 3 | 5 |
| 2013 | 3 | 0 |
| 2014 | 6 | 4 |
| 2015 | 1 | 5 |
| 2016 | 7 | 5 |
| 2017 | 3 | 3 |
| 2018 | 5 | 8 |
| 2019 | 5 | 3 |
| 2020 | 9 | 8 |
| 2021 | 4 | 10 |
| 2022 | 5 | 11 |
| 2023 | 8 | 13 |
| 2024 | 8 | 14 |
| 2025 | 7 | 8 |
| 2026 | 8 | 7 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Methods for collecting electron diffraction patterns14 Jul 2026US 12,680,969 B2The Regents of the University of California
- Measurement and determination of crystallographic texture with respect to position12 May 2026US 12,625,096 B2ROLLS-ROYCE plc
- Method and system for orientating a sample for inspection with charged particle microscopy21 Apr 2026US 12,607,579 B2FEI Company
- Crystal structure analysis method, crystal structure analysis device, and crystal structure analysis program14 Apr 2026US 12,601,696 B2Rigaku Corporation
- Detector and method for obtaining Kikuchi images14 Apr 2026US 12,603,246 B2Bruker Nano, Inc.
- Systems and methods for nanocrystal fabrication20 Aug 2026US 2026/0242974 A1
- Processing method and system for three-dimensional neutron diffraction data of single crystal material23 Jul 2026US 2026/0210883 A1Shanghai Jiao Tong University
- Method for inspecting gallium nitride based semiconductor film, method for manufacturing gallium nitride based semiconductor device comprising the same, and layered structure used therefor25 Jun 2026US 2026/0182264 A1Japan Display Inc.
- Calculation apparatus, calculation method, program and machine-learning model generating method4 Jun 2026US 2026/0153459 A1Rigaku Corporation
- Crystal evaluation method, crystal evaluation device, sic substrate, sic device, and sic epitaxial wafer30 Apr 2026US 2026/0118295 A1Resonac Corporation
Most cited
By later US patents
- System and method for improving data acquisition capability in spectroscopic ellipsometers61US 5,757,494 AJ. A. Woollam Co. Inc. · 1998
- Ellipsometer/polarimeter based process monitor and control system suitable for simultaneous retrofit on molecular beam epitaxy system RHEED/LEED interface system, and method of use36US 5,582,646 AJ. A. Woollam Co. Inc. · 1996
- Detector for X-rays with high spatial and high spectral resolution21US 10,295,486 B2Sigray, Inc. · 2019
- Methods and devices for high throughput crystal structure analysis by electron diffraction15US 8,253,099 B2Nanomegas Sprl · 2012
- Reflection electron diffractometer and method for observing microscopic surface structure13US 5,093,573 A1992