CRYSTAL EVALUATION METHOD, CRYSTAL EVALUATION DEVICE, SiC SUBSTRATE, SiC DEVICE, AND SiC EPITAXIAL WAFER

A crystal evaluation device configured to evaluate a crystal state of a SiC crystal, the device comprising:

• a scanning electron microscope including an electron backscatter diffraction device, and
• an analysis device configured to perform image analysis of a Kikuchi pattern output from the electron backscatter diffraction device,
• wherein the analysis device performs image analysis of a Kikuchi pattern at a measurement point of the SiC crystal, compares the Kikuchi pattern with a pre-stored Kikuchi pattern for reference, and evaluates a crystal state of the SiC crystal.

A SiC substrate comprising a crystal structure,

• wherein the crystal structure in which 90% of Kikuchi patterns at a plurality of measurement points in one main surface of the SiC substrate obtained by an electron backscatter diffraction method are identical to each other.

A SiC device comprising a crystal structure comprising,

• wherein the crystal structure including a SiC substrate and in which 90% or more of Kikuchi patterns at a plurality of measurement points in one main surface of the SiC substrate obtained by an electron backscatter diffraction method are identical to each other.

A SiC epitaxial wafer comprising a SiC epitaxial layer,

• wherein the SiC epitaxial layer including a crystal structure located on one main surface side of a substrate and in which 90% or more of Kikuchi patterns at a plurality of measurement points obtained by an electron backscatter diffraction method are identical to each other.