C30B 31/22
By ion-implantation
Official title: by ion-implantation
C30B31/22 (By ion-implantation) appears on 137 US grants and 137 published applications in this corpus.
Search patents in C30B- Granted patents
- 137
- Published applications
- 137
- Assignees
- 97
- Inventors
- 346
- Latest grant
- 5 May 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1977 | 1 | 0 |
| 1978 | 0 | 0 |
| 1979 | 0 | 0 |
| 1980 | 2 | 0 |
| 1981 | 2 | 0 |
| 1982 | 0 | 0 |
| 1983 | 3 | 0 |
| 1984 | 3 | 0 |
| 1985 | 4 | 0 |
| 1986 | 0 | 0 |
| 1987 | 1 | 0 |
| 1988 | 1 | 0 |
| 1989 | 4 | 0 |
| 1990 | 2 | 0 |
| 1991 | 1 | 0 |
| 1992 | 1 | 0 |
| 1993 | 0 | 0 |
| 1994 | 1 | 0 |
| 1995 | 2 | 0 |
| 1996 | 2 | 0 |
| 1997 | 3 | 0 |
| 1998 | 1 | 0 |
| 1999 | 5 | 0 |
| 2000 | 1 | 0 |
| 2001 | 4 | 3 |
| 2002 | 2 | 3 |
| 2003 | 3 | 3 |
| 2004 | 2 | 1 |
| 2005 | 2 | 3 |
| 2006 | 1 | 1 |
| 2007 | 0 | 1 |
| 2008 | 2 | 2 |
| 2009 | 0 | 5 |
| 2010 | 3 | 7 |
| 2011 | 3 | 2 |
| 2012 | 2 | 3 |
| 2013 | 2 | 8 |
| 2014 | 6 | 5 |
| 2015 | 1 | 5 |
| 2016 | 9 | 5 |
| 2017 | 5 | 15 |
| 2018 | 3 | 7 |
| 2019 | 5 | 4 |
| 2020 | 11 | 9 |
| 2021 | 6 | 6 |
| 2022 | 6 | 2 |
| 2023 | 4 | 11 |
| 2024 | 5 | 9 |
| 2025 | 7 | 9 |
| 2026 | 3 | 8 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Seed substrate for epitaxial growth use and method for manufacturing same, and semiconductor substrate and method for manufacturing same5 May 2026US 12,618,172 B2Shin-Etsu Chemical Co., Ltd.
- Solid state electric field sensor10 Mar 2026US 12,571,828 B2The University of Melbourne
- Composite substrate and preparation method thereof, and semiconductor device structure27 Jan 2026US 12,538,766 B2Enkris Semiconductor, Inc.
- Substrates for optoelectronic devices and methods of manufacturing same30 Dec 2025US 12,509,798 B2Socpra Sciences Et Genie S. E. C.
- Large diameter silicon carbide wafers18 Nov 2025US 12,473,661 B2Wolfspeed, Inc.
- Structure comprising a high thermal conductivity boron arsenide layer, and method of manufacture23 Jul 2026US 2026/0209990 A1
- Manufacturing process for vertical gan-based microelectronic devices30 Apr 2026US 2026/0122945 A1Commissariat A L' Energie Atomique Et Aux Energies Alternatives
- Large diameter silicon carbide wafers12 Mar 2026US 2026/0071350 A1Wolfspeed, Inc.
- Large diameter silicon carbide wafers12 Mar 2026US 2026/0071351 A1Wolfspeed, Inc.
- Ion Beam-Induced Epitaxial Crystallization on an Integrated Processing Architecture5 Mar 2026US 2026/0068553 A1APPLIED Materials.Inc.
Most cited
By later US patents
- Slicing of single-crystal films using ion implantation291US 6,540,827 B1The Trustees of Columbia University in the City of New York · 2003
- Method and apparatus for plasma source ion implantation218US 4,764,394 AWisconsin Alumni Research Foundation · 1988
- Plasma processing apparatus for large area ion irradiation160US 4,859,908 AMatsushita Electric Industrial Co., Ltd. · 1989
- Method for conducting heat to or from an article being treated under vacuum120US 4,261,762 AEaton Corporation · 1981
- Methods and apparatus for thermal transfer with a semiconductor wafer in vacuum64US 4,832,781 AVarian Associates, Inc. · 1989