MANUFACTURING PROCESS FOR VERTICAL GaN-BASED MICROELECTRONIC DEVICES

A method for manufacturing at least one microelectronic device, the method comprising:

• providing a substrate having an upper face;
• performing localized epitaxial growth of gallium nitride on the upper face of the substrate to form at least one GaN-based island, each of the at least one GaN-based island having a lower face facing the upper face of the substrate and comprising a GaN-based drift layer having a lower face facing the upper face of the substrate and an upper face opposite the lower face;
• for each of the at least one GaN-based island, forming a first doped GaN-based layer having a first conductivity type selected from n-type and p-type, the first doped GaN-based layer forming a plurality of doped wells separated from one another and each extending from the upper face of the drift layer;
• and
• forming an electrically conductive layer that constitutes a drain electrically connected to the lower face of each of the at least one GaN-based island, thereby forming at least one vertical transistor.