C30B 30/04
Production of single crystals or homogeneous polycrystalline material with defined structure characterised
Official title: using magnetic fields
C30B30/04 (Production of single crystals or homogeneous polycrystalline material with defined structure characterised) appears on 119 US grants and 172 published applications in this corpus.
Search patents in C30B- Granted patents
- 119
- Published applications
- 172
- Assignees
- 91
- Inventors
- 364
- Latest grant
- 21 Jul 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2002 | 3 | 3 |
| 2003 | 0 | 0 |
| 2004 | 1 | 2 |
| 2005 | 2 | 1 |
| 2006 | 1 | 2 |
| 2007 | 2 | 4 |
| 2008 | 1 | 2 |
| 2009 | 3 | 9 |
| 2010 | 2 | 7 |
| 2011 | 2 | 6 |
| 2012 | 4 | 3 |
| 2013 | 7 | 3 |
| 2014 | 4 | 5 |
| 2015 | 3 | 8 |
| 2016 | 6 | 7 |
| 2017 | 5 | 8 |
| 2018 | 7 | 11 |
| 2019 | 8 | 7 |
| 2020 | 10 | 15 |
| 2021 | 7 | 13 |
| 2022 | 7 | 14 |
| 2023 | 9 | 8 |
| 2024 | 10 | 18 |
| 2025 | 11 | 8 |
| 2026 | 4 | 8 |
By publication year. 2026 runs to 8 Oct.
Recent patents
- Single crystal pulling apparatus and method for pulling single crystal21 Jul 2026US 12,686,940 B2Shin-Etsu Handotai Co., Ltd.
- Apparatus and method for synthesizing and continuously growing phosphide in magnetic field in immersion fashion14 Apr 2026US 12,601,086 B2The 13th Research Institute of China Electronics Technology Group Corporation
- Heating part of silicon single crystal manufacturing device, convection pattern control method for silicon melt, silicon single crystal manufacturing method, silicon wafer manufacturing method, silicon single crystal manufacturing device, and convection pattern control system for silicon melt7 Apr 2026US 12,595,585 B2Sumco Corporation
- Method for measuring distance between lower end surface of heat shielding member and surface of raw material melt, method for controlling distance between lower end surface of heat shielding member and surface of raw material melt and method for manufacturing silicon single crystal10 Mar 2026US 12,571,124 B2Shin-Etsu Handotai Co., Ltd.
- Single crystal manufacturing method, magnetic field generator, and single crystal manufacturing apparatus9 Dec 2025US 12,492,489 B2Sumco Corporation
- Cathode active material8 Oct 2026US 2026/0312028 A1Toyota Jidosha Kabushiki Kaisha
- Silicon single crystal manufacturing method, and silicon single crystal manufacturing apparatus1 Oct 2026US 2026/0297810 A1Sumco Corporation
- Silicon single crystal production method and silicon single crystal production apparatus17 Sep 2026US 2026/0275566 A1Sumco Corporation
- Crystal production method, high-frequency heating device, and crystal producing apparatus30 Jul 2026US 2026/0218410 A1A. C. Company
- Silicon wafer for epitaxial growth and epitaxial wafer28 May 2026US 2026/0146366 A1Shin-Etsu Handotai Co., Ltd.
Most cited
By later US patents
- System and method of aligning scintillator crystalline structures for computed tomography imaging20US 6,480,563 B2GE Medical Systems Global Technology Company, LLC · 2002
- Ceramic, piezoelectric device, and production method thereof19US 8,547,001 B2Canon Kabushiki Kaisha · 2013
- Vacuum treatment system14US 7,905,991 B2Oerlikon Trading AG, Trubbach · 2011
- Method for producing silicon single crystal and production apparatus therefor, as well as single crystal and silicon wafer produced by the method13US 6,423,285 B1Shin-Etsu Handotai Co., Ltd. · 2002
- System and method of aligning scintillator crystalline structures for computed tomography imaging12US 6,704,391 B2GE Medical Systems Global Technology Company, LLC · 2004