Heating part of silicon single crystal manufacturing device, convection pattern control method for silicon melt, silicon single crystal manufacturing method, silicon wafer manufacturing method, silicon single crystal manufacturing device, and convection pattern control system for silicon melt

A heating portion of monocrystalline silicon manufacturing equipment, the heating portion disposed outside and surrounding a quartz crucible and configured to heat a silicon melt in the quartz crucible, the heating portion comprising:

• a heat generation portion integrally molded into a cylinder;
• and
• 2n pieces, n being an integer of 2 or more, of power supply portions configured to supply electric power to the heat generation portion, wherein
• when the heating portion is divided by a virtual plane into two comprising a first heating region located on one side of the heat generation portion with respect to the virtual plane and a second heating region located on the other side of the heat generation portion with respect to the virtual plane, the virtual plane passing through a center axis of the heat generation portion, being perpendicular to the heat generation portion, and being parallel to a central magnetic field line of a horizontal magnetic field applied to the silicon melt, a heat generation amount of the first heating region and a heat generation amount of the second heating region are set to different values by setting a first resistance value and a second resistance value to different values, the first resistance value being a sum of resistance values of the heat generation portion and all the power supply portions provided in the first heating region, the second resistance value being a sum of resistance values of the heat generation portion and all the power supply portions provided in the second heating region,
• the power supply portions each comprise:
• a terminal connected to the heat generation portion;
• an electrode having one end directly connected to the terminal and the other end connected to a power source, and a fastener fastening the terminal and the electrode, and
• the first resistance value and the second resistance value are set to different values by making fastening force of the fastener applied in the first heating region differ from fastening force of the fastener applied in the second heating region.

A heating portion of monocrystalline silicon manufacturing equipment, the heating portion disposed outside and surrounding a quartz crucible and configured to heat a silicon melt in the quartz crucible, the heating portion comprising:

• a heat generation portion integrally molded into a cylinder;
• and
• 2n pieces, n being an integer of 2 or more, of power supply portions configured to supply electric power to the heat generation portion, wherein
• when the heating portion is divided by a virtual plane into two comprising a first heating region located on one side of the heat generation portion with respect to the virtual plane and a second heating region located on the other side of the heat generation portion with respect to the virtual plane, the virtual plane passing through a center axis of the heat generation portion, being perpendicular to the heat generation portion, and being parallel to a central magnetic field line of a horizontal magnetic field applied to the silicon melt, a heat generation amount of the first heating region and a heat generation amount of the second heating region are set to different values by setting a first resistance value and a second resistance value to different values, the first resistance value being a sum of resistance values of the heat generation portion and all the power supply portions provided in the first heating region, the second resistance value being a sum of resistance values of the heat generation portion and all the power supply portions provided in the second heating region,
• the power supply portions each comprise:
• a terminal connected to the heat generation portion, and an electrode having one end directly connected to the terminal and the other end connected to a power source,
• the heat generation portion and the terminal are bonded to each other through an adhesive layer, and
• the first resistance value and the second resistance value are set to different values by making a material or a thickness of the adhesive layer used in the power supply portion provided in the first heating region differ from a material or a thickness of the adhesive layer used in the power supply portion provided in the second heating region.