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AssigneeShin-Etsu Handotai Co., Ltd.
InventorsKirio Itoi, Eiichi Iino, Tohru Ishizuka, Tomohiko Ohta, Izumi Fusegawa
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In a method for producing a silicon single crystal by growing a single crystal ingot while a magnetic field perpendicular to a crystal growth axis is applied to a silicon melt contained in a quartz crucible during pulling of the single crystal from the melt contained in the quartz crucible, the crystal growth is performed so that one of a low temperature region and a high temperature region generated at a surface of the silicon melt contained in the crucible should always cover a solid-liquid interface of the crystal growth, or a ratio of vertical magnetic field component to horizontal magnetic field component for magnetic field strength at the crystal center of the surface of the silicon melt contained in the quartz crucible is controlled to be 0.3 or more and 0.5 or less. There are provided methods for producing a silicon single crystal based on the CZ method in which a horizontal magnetic field is applied, which can produce a silicon single crystal ingot of high uniformity of interstitial oxygen concentration along the growth direction of the grown single crystal with high productivity and high yield.
A silicon single crystal produced by the horizontal magnetic field Czochralski method, wherein variation magnitude of interstitial oxygen concentration is 0.5 ppma or less in an arbitrary section with a length of 40 mm along the crystal growth axis direction of the single crystal pulled from a silicon melt contained in a quartz crucible.
A method for producing a silicon single crystal by growing a single crystal ingot while a magnetic field perpendicular to a crystal growth axis is applied to a silicon melt contained in a quartz crucible-during pulling of the single crystal from the melt contained in the quartz crucible, wherein the crystal growth is performed so that one of a low temperature region and a high temperature region generated at a surface of the silicon melt contained in the crucible should always cover a solid-liquid interface of the crystal growth.
A method for producing a silicon single crystal by growing a single crystal ingot while a magnetic field perpendicular to a crystal growth axis is applied to a silicon melt contained in a quartz crucible during pulling of the single crystal from the melt contained in a quartz crucible, wherein a ratio of vertical magnetic field component to horizontal magnetic field component for magnetic field strength at the crystal center of the surface of the silicon melt contained in the quartz crucible is 0.3 or more and 0.5 or less.
An apparatus for producing a silicon single crystal by pulling a single crystal from a silicon melt contained in a quartz crucible, which is provided with a magnetic field generation apparatus for applying a magnetic field perpendicular to the crystal growth axis to the melt in the quartz crucible, wherein a member for controlling a magnetic field strength ratio is provided around the magnetic field generation apparatus or an apparatus for growing a single crystal.
Dependencies are inferred from the claim text.