Silicon single crystal production method and silicon single crystal production apparatus

A production method of monocrystalline silicon of pulling up the monocrystalline silicon while applying a horizontal magnetic field to a silicon melt, by using a monocrystalline silicon production apparatus,

• the monocrystalline silicon production apparatus including
• a crucible configured to hold the silicon melt, and
• a heater having a hollow cylindrical shape and surrounding the crucible,
• the heater including a first heat generating section and a second heat generating section each having a hollow semi-cylindrical shape, the first and second heat generating sections having an identical heat generation property, the heater being disposed so that, when the first and second heat generating sections generate heat with heat generation amounts different from each other, a heating amount of a first portion of the crucible and a heating amount of a second portion of the crucible are different from each other, the first portion and the second portion being located on both sides with respect to a vertical virtual plane that includes a center axis of the crucible and a central magnetic field line of the horizontal magnetic field,
• the production method comprising:
• performing first heating and producing while the first heat generating section and the second heat generating section generate heat with an identical heat generation amount;
• and
• performing second heating and producing while the first heat generating section and the second heat generating section generate heat with heat generation amounts different from each other.