Silicon wafer for epitaxial growth and epitaxial wafer

Abstract

A silicon wafer for epitaxial growth including a silicon single crystal, wherein the silicon single crystal is produced by a Czochralski method, an entire silicon single crystal is an N (Neutral) region so as not to contain a void and a dislocation cluster, size and density of oxygen precipitation nuclei are adjusted, and the oxygen precipitation nuclei with the size of 18 nm or more in the silicon wafer have the density of less than 5×107/cm3. This provides the silicon wafer for epitaxial growth with inhibited defects and having extremely good surface layer quality.

Dependencies are inferred from the claim text.