C30B 28/08
By zone-melting
Official title: by zone-melting
C30B28/08 (By zone-melting) appears on 15 US grants and 20 published applications in this corpus.
Search patents in C30B- Granted patents
- 15
- Published applications
- 20
- Assignees
- 16
- Inventors
- 30
- Latest grant
- 21 Feb 2023
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2005 | 0 | 3 |
| 2006 | 0 | 0 |
| 2007 | 1 | 2 |
| 2008 | 0 | 2 |
| 2009 | 0 | 1 |
| 2010 | 0 | 1 |
| 2011 | 2 | 3 |
| 2012 | 1 | 1 |
| 2013 | 4 | 2 |
| 2014 | 2 | 1 |
| 2015 | 2 | 0 |
| 2016 | 0 | 1 |
| 2017 | 0 | 0 |
| 2018 | 1 | 1 |
| 2019 | 0 | 0 |
| 2020 | 0 | 1 |
| 2021 | 1 | 0 |
| 2022 | 0 | 0 |
| 2023 | 1 | 0 |
| 2024 | 0 | 0 |
| 2025 | 0 | 0 |
| 2026 | 0 | 1 |
By publication year. 2026 runs to 8 Oct.
Recent patents
- Additive manufacturing based multi-layer fabrication/repair21 Feb 2023US 11,583,928 B2Raytheon Technologies Corporation
- Laser annealing apparatus for semiconductors having multiple laser energy measuring means23 Nov 2021US 11,183,402 B2Samsung Electronics Co., Ltd.
- Apparatus for manufacturing semiconductor device and method for manufacturing semiconductor device using same23 Oct 2018US 10,106,914 B2Ap Systems Inc.
- Laser annealing method, laser annealing apparatus, and method for manufacturing thin film transistor4 Aug 2015US 9,099,386 B2Kabushiki Kaisha Toshiba
- Remote cool down of a purified directionally solidified material from an open bottom cold crucible induction furnace16 Jun 2015US 9,056,776 B2Inductotherm Corp.
- Inorganic structure and method for manufacturing inorganic structure26 Mar 2026US 2026/0085448 A1Osaka University
- Additive manufacturing based multi-layer fabrication/repair22 Oct 2020US 2020/0331059 A1United Technologies Corporation
- Laser annealing apparatus25 Oct 2018US 2018/0308725 A1Samsung Electronics Co., Ltd.
- Apparatus for manufacturing semiconductor device and method for manufacturing semiconductor device using same29 Sep 2016US 2016/0284562 A1Ap Systems Inc.
- Remote Cool Down of a Purified Directionally Solidified Material From an Open Bottom Cold Crucible Induction Furnace13 Feb 2014US 2014/0041414 A1Inductotherm Corp.
Most cited
By later US patents
- Single scan irradiation for crystallization of thin films46US 7,311,778 B2The Trustees of Columbia University in the City of New York · 2007
- Single scan irradiation for crystallization of thin films11US 7,964,480 B2The Trustees of Columbia University in the City of New York · 2011
- Systems and methods for preparing epitaxially textured polycrystalline films9US 8,012,861 B2The Trustees of Columbia University in the City of New York · 2011
- Systems and methods for preparing epitaxially textured polycrystalline films3US 8,426,296 B2The Trustees of Columbia University in the City of New York · 2013
- Laser irradiation apparatus2US 8,525,075 B2Semiconductor Energy Laboratory Co.Ltd. · 2013