Laser annealing apparatus for semiconductors having multiple laser energy measuring means

A laser annealing apparatus, comprising:

• a laser oscillating structure configured to emit a first laser beam having a first wavelength and a first beam cross-section to a semiconductor substrate inside a chamber that includes an optical window;
• a laser oscillator configured to emit a second laser beam to the semiconductor substrate, the second laser beam having a second wavelength different from the first wavelength;
• a beam expanding telescope on an optical path for the second laser beam, the beam expanding telescope configured to expand a cross-section of the second laser beam to a second beam cross-section;
• a first power meter configured to measure energy of the second laser beam;
• a first beam splitter on the optical path for the second laser beam, the first beam splitter being between the beam expanding telescope and the optical window of the chamber;
• and
• a second power meter configured to measure energy of a third laser beam, the laser annealing apparatus being configured such that the third laser beam is generated as the second laser beam is reflected by the semiconductor substrate toward the first beam splitter, such that the third laser beam is incident on the first beam splitter,
• wherein the first laser beam is configured such that an area of the first beam cross-section of the first laser beam that reached the semiconductor substrate is identical to an area of the second beam cross-section,
• wherein the first laser beam is configured to anneal the semiconductor substrate such that a portion of a top surface of the semiconductor substrate is melted, and
• wherein the first laser beam and the second laser beam are configured to be simultaneously irradiated on the semiconductor substrate.