C25D 11/32
Of semiconducting materials
Official title: of semiconducting materials
C25D11/32 (Of semiconducting materials) appears on 88 US grants and 82 published applications in this corpus.
Search patents in C25D- Granted patents
- 88
- Published applications
- 82
- Assignees
- 76
- Inventors
- 237
- Latest grant
- 16 Dec 2025
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 1 | 0 |
| 1978 | 1 | 0 |
| 1979 | 2 | 0 |
| 1980 | 0 | 0 |
| 1981 | 1 | 0 |
| 1982 | 0 | 0 |
| 1983 | 1 | 0 |
| 1984 | 4 | 0 |
| 1985 | 0 | 0 |
| 1986 | 2 | 0 |
| 1987 | 1 | 0 |
| 1988 | 0 | 0 |
| 1989 | 1 | 0 |
| 1990 | 2 | 0 |
| 1991 | 0 | 0 |
| 1992 | 2 | 0 |
| 1993 | 0 | 0 |
| 1994 | 1 | 0 |
| 1995 | 2 | 0 |
| 1996 | 1 | 0 |
| 1997 | 1 | 0 |
| 1998 | 2 | 0 |
| 1999 | 1 | 0 |
| 2000 | 1 | 0 |
| 2001 | 6 | 1 |
| 2002 | 4 | 0 |
| 2003 | 3 | 4 |
| 2004 | 3 | 3 |
| 2005 | 0 | 2 |
| 2006 | 1 | 1 |
| 2007 | 3 | 4 |
| 2008 | 0 | 1 |
| 2009 | 2 | 2 |
| 2010 | 0 | 4 |
| 2011 | 1 | 3 |
| 2012 | 0 | 3 |
| 2013 | 3 | 5 |
| 2014 | 4 | 5 |
| 2015 | 6 | 6 |
| 2016 | 3 | 5 |
| 2017 | 5 | 6 |
| 2018 | 5 | 5 |
| 2019 | 3 | 3 |
| 2020 | 4 | 3 |
| 2021 | 1 | 2 |
| 2022 | 1 | 2 |
| 2023 | 1 | 0 |
| 2024 | 0 | 4 |
| 2025 | 1 | 3 |
| 2026 | 0 | 5 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Silicon carbide substrate or substrate processing method16 Dec 2025US 12,501,676 B2National Central University
- Methods for fabricating and etching porous silicon carbide structures22 Aug 2023US 11,732,377 B2Elwha LLC
- Anodic-oxidation equipment, anodic-oxidation method, and method for producing cathode of anodic-oxidation equipment15 Feb 2022US 11,248,306 B2Shin-Etsu Handotai Co., Ltd.
- Methods for fabricating and etching porous silicon carbide structures21 Sep 2021US 11,124,889 B2Elwha LLC
- Systems and methods for forming nanowires using anodic oxidation15 Dec 2020US 10,868,117 B2National Taiwan University
- Systems and methods for porous tool23 Jul 2026US 2026/0215203 A1IQE plc
- Method for preparing one or multiple large-area continuous graphene monolayers and structure prepared thereby16 Jul 2026US 2026/0201594 A1LEAP Semiconductor Corp.
- Method for preparing epitaxial structure and epitaxial structure prepared thereby16 Jul 2026US 2026/0201595 A1LEAP Semiconductor Corp.
- Systems and methods for porous wall coatings12 Mar 2026US 2026/0075939 A1IQE plc
- Systems and methods for stress reduction in porous layers12 Mar 2026US 2026/0076113 A1IQE plc
Most cited
By later US patents
- SOI substrate processing method197US 6,200,878 B1Canon Kabushiki Kaisha · 2001
- Process for producing semiconductor member, process for producing solar cell, and anodizing apparatus120US 6,664,169 B1Canon Kabushiki Kaisha · 2003
- Method of producing semiconductor member75US 6,468,923 B1Canon Kabushiki Kaisha · 2002
- Method for chemically treating a single side of a workpiece73US 4,165,252 ABurroughs Corporation · 1979
- Anodization apparatus with supporting device for substrate to be treated65US 5,458,755 ACanon Kabushiki Kaisha · 1995