Silicon carbide substrate or substrate processing method

Abstract

A substrate processing method includes providing a substrate, wherein the substrate has a surface and a bottom surface opposite to each other, the substrate is defined with a predetermined area, the predetermined area is defined with a predetermined reaction part, and the predetermined reaction part extends from the surface toward the bottom surface of the substrate; performing a anodization reaction on the predetermined reaction part by an electrochemical method to convert the predetermined reaction part into a weakened layer, wherein the weakened layer has a thickness; and removing the weakened layer so that the substrate in the predetermined area has an exposed surface.

Dependencies are inferred from the claim text.