Method of producing semiconductor member

A system of producing two kinds of semiconductor members, said system comprising:

• a first step of preparing a first semiconductor member, the first semiconductor member having a non-porous layer on a semiconductor substrate to produce an SOI wafer;
• and
• a second step of transferring the non-porous layer from the first semiconductor member onto a second semiconductor member,
• wherein reuse of the semiconductor substrate from which the non-porous layer is separated in the second step occurs (n−1) times, where n is a natural number greater than or equal to 2,
• wherein the first and second steps are repeated n times to produce n sheets of the SOI wafers at maximum output,
• wherein after the second step in n-th use, the semiconductor substrate is used to produce a non-SOI wafer, and
• wherein the n is determined according to a demand for the SOI wafer or a demand for the non-SOI wafer, or based on the inspection results of the semiconductor substrate.

A method of controlling the production of a semiconductor member, said method comprising:

• a first step of preparing a first semiconductor member, the first semiconductor member having a non-porous layer on a semiconductor substrate to produce an SOI wafer;
• and
• a second step of transferring the non-porous layer from the first semiconductor member onto a second semiconductor member,
• wherein reuse of the semiconductor substrate from which the non-porous layer is separated in the second step occurs (n−1) times, where n is a natural number greater than or equal to 2,
• wherein the first and second steps are repeated n times to produce n sheets of the SOI wafers at maximum output,
• wherein after the second step in n-th use, the semiconductor substrate is used to produce a non-SOI wafer, and
• wherein the n is determined according to a demand for the SOI wafer or a demand for the non-SOI wafer, or based on the inspection results of the semiconductor substrate.