Method for preparing epitaxial structure and epitaxial structure prepared thereby

Abstract

A method for preparing an epitaxial structure includes: subjecting a single crystal silicon substrate to a carburizing treatment at a temperature ranging from 600°C to 1200°C, so as to obtain an intermediate structure including the single crystal silicon substrate and a 3C-SiC layer formed on the single crystal silicon substrate; placing the intermediate structure in a molten electrolyte of an electrolysis apparatus to permit the intermediate structure to serve as an anode, and applying a predetermined voltage to cause silicon atoms in the 3C-SiC layer to undergo electrolytic dissociation, such that the silicon atoms move out from lattice positions in the 3C-SiC layer and carbon atoms remaining in the lattice positions are rearranged to form a graphene layer; and growing an epitaxial film made of a group III-V semiconductor compound or a group II-VI semiconductor compound on the graphene layer. The epitaxial structure prepared by the method is also provided.

Dependencies are inferred from the claim text.