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US 10,868,117 B2Granted
Systems and methods for forming nanowires using anodic oxidation
AssigneesTaiwan Semiconductor Manufacturing Company, Ltd., National Taiwan University
InventorsJenn-Gwo Hwu, Wei-Cheng Tian, Po-Hao Tseng
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Abstract
Structures, devices and methods are provided for forming nanowires on a substrate. A first protruding structure is formed on a substrate. The first protruding structure is placed in an electrolytic solution. Anodic oxidation is performed using the substrate as part of an anode electrode. One or more nanowires are formed in the protruding structure. The nanowires are surrounded by a first dielectric material formed during the anodic oxidation.
Claims20
A structure comprising:
- a semiconductor substrate;
- a protruding structure on the semiconductor substrate;
- and
- a nanostructure and a plurality of nano-vias in the protruding structure, the plurality of nano-vias comprising a first nano-via and a second nano-via, the first nano-via of the plurality of nano-vias being disposed closer to a major surface of the semiconductor substrate than the second nano-via of the plurality of nano-vias, wherein each nano-via of the plurality of nano-vias is filled with air.
1 more element
A device comprising:
- a source region formed on a semiconductor substrate;
- a drain region formed on the semiconductor substrate;
- a protruding structure on the semiconductor substrate between the source region and the drain region;
- and
- a nanostructure and a plurality of nano-vias between the source region and the drain region, wherein each nano-via of the plurality of nano-vias is between the nanostructure and the semiconductor substrate in a direction perpendicular to a major surface of the semiconductor substrate.
2 more elements
A structure comprising:
- a semiconductor substrate;
- one or more nano-vias over the semiconductor substrate;
- a nanostructure over the one or more nano-vias;
- and
- a protruding structure on the semiconductor substrate, the protruding structure comprising a dielectric material surrounding the nanostructure and each nano-via of the one or more nano-vias, a thickness of the dielectric material being greater in a lower portion of the protruding structure than in an upper portion of the protruding structure.
2 more elements
Dependencies are inferred from the claim text.