Method for preparing one or multiple large-area continuous graphene monolayers and structure prepared thereby

Abstract

A method for preparing a graphene layer includes: subjecting a single crystal silicon substrate to a carburizing treatment at a temperature ranging from 600° C. to 1200° C., so as to obtain an intermediate structure including the single crystal silicon substrate and a 3C-SiC layer formed on the single crystal silicon substrate; placing the intermediate structure in a molten electrolyte of an electrolysis apparatus to permit the intermediate structure to serve as an anode, and applying a predetermined voltage to cause silicon atoms in the 3C-SiC layer to undergo electrolytic dissociation, such that the silicon atoms move out from lattice positions in the 3C-SiC layer and carbon atoms remaining in the lattice positions are rearranged to form a graphene layer which is a continuous graphene monolayer or a plurality of continuous graphene layers. The structure including the graphene layer prepared by the method is also provided.

Dependencies are inferred from the claim text.