C23C 14/088
Of the type abo3 with a representing alkali, alkaline earth metal or
Official title: {of the type ABO3 with A representing alkali, alkaline earth metal or Pb and B representing a refractory or rare earth metal}
C23C14/088 (Of the type abo3 with a representing alkali, alkaline earth metal or) appears on 204 US grants and 228 published applications in this corpus.
Search patents in C23C- Granted patents
- 204
- Published applications
- 228
- Assignees
- 135
- Inventors
- 540
- Latest grant
- 7 Jul 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1988 | 3 | 0 |
| 1989 | 3 | 0 |
| 1990 | 1 | 0 |
| 1991 | 3 | 0 |
| 1992 | 2 | 0 |
| 1993 | 3 | 0 |
| 1994 | 1 | 0 |
| 1995 | 1 | 0 |
| 1996 | 3 | 0 |
| 1997 | 3 | 0 |
| 1998 | 5 | 0 |
| 1999 | 5 | 0 |
| 2000 | 3 | 0 |
| 2001 | 7 | 5 |
| 2002 | 4 | 5 |
| 2003 | 11 | 3 |
| 2004 | 3 | 5 |
| 2005 | 2 | 3 |
| 2006 | 5 | 1 |
| 2007 | 1 | 9 |
| 2008 | 0 | 9 |
| 2009 | 3 | 13 |
| 2010 | 5 | 13 |
| 2011 | 5 | 9 |
| 2012 | 6 | 8 |
| 2013 | 9 | 10 |
| 2014 | 7 | 7 |
| 2015 | 4 | 14 |
| 2016 | 10 | 13 |
| 2017 | 10 | 17 |
| 2018 | 12 | 11 |
| 2019 | 9 | 6 |
| 2020 | 7 | 12 |
| 2021 | 4 | 12 |
| 2022 | 7 | 9 |
| 2023 | 11 | 13 |
| 2024 | 10 | 16 |
| 2025 | 11 | 1 |
| 2026 | 5 | 4 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Rhythmic deposition production method and equipment for perovskite thin film7 Jul 2026US 12,674,233 B2Hangzhou Microquanta Semiconductor Co., Ltd.
- Dielectric having high-dielectric constant, method of manufacturing the same, target material for manufacturing the dielectric, electronic device including the dielectric, and electronic apparatus including the electronic device12 May 2026US 12,628,361 B2Samsung Electronics Co., Ltd.
- Nanocomposite dielectric film material for energy storage prepared by vertical self-assembly of lead zirconate titanate and magnesium oxide, and preparation method thereof24 Feb 2026US 12,559,832 B2Nanjing University of Aeronautics and Astronautics
- Laminated substrate with piezoelectric thin film, piezoelectric thin film element and method for manufacturing this element13 Jan 2026US 12,527,226 B2Sciocs Company Limited
- Thin-film piezoelectric material element6 Jan 2026US 12,518,783 B2SAE Magnetics (H. K.) Ltd.
- Dielectric having high-dielectric constant, method of manufacturing the same, target material for manufacturing the dielectric, electronic device including the dielectric, and electronic apparatus including the electronic device17 Sep 2026US 2026/0282404 A1Samsung Electronics Co., Ltd.
- Lanthanum-gadolinium-samarium-based high-entropy thermal barrier coatings and preparation method therefor27 Aug 2026US 2026/0250828 A1Aecc Beijing Institute of Aeronautical Materials
- Piezoelectric stack, method of manufacturing piezoelectric stack, sputtering target material, and method of manufacturing sputtering target material19 Mar 2026US 2026/0082811 A1Sumitomo Chemical Company, Limited
- Homoepitaxial thin film, manufacturing method and manufacturing apparatus thereof1 Jan 2026US 2026/0002284 A1Shincron Co., Ltd.
- Stacked substrate having piezoelectric film, method for manufacturing stacked substrate, and piezoelectric element3 Jul 2025US 2025/0221314 A1Sumitomo Chemical Company, Limited
Most cited
By later US patents
- Physical vapor deposition methods428US 6,558,517 B2Micron Technology, Inc. · 2003
- Chemical vapor deposition method for depositing a high k dielectric film423US 6,884,475 B2Micron Technology, Inc. · 2005
- Method of forming a capacitor421US 7,052,584 B2Micron Technology, Inc. · 2006
- Methods of forming a capacitor420US 7,217,617 B2Micron Technology, Inc. · 2007
- Method of making ferrolectric thin film composites182US 5,766,697 AThe United States of America as represented by the Secretary of the Army · 1998