Rhythmic deposition production method and equipment for perovskite thin film

A rhythmic deposition production equipment of a perovskite thin film, comprising

• a deposition reaction chamber, wherein, the deposition reaction chamber comprises two functional regions comprising a deposition functional region and a reaction functional region, the deposition functional region comprises one or more deposition segments, the deposition segments comprise at least one unit deposition working position, an evaporation source is disposed inside each unit deposition working position, and the evaporation source is configured to receive a precursor AX material;
• the reaction functional region comprises one or more reaction segments, the reaction segments comprise at least one unit reaction working position, an evaporation source is not disposed inside each unit reaction working position, the deposition segments are spaced apart from the reaction segments, the deposition reaction chamber is in communication with a vacuum pump through a pipe, and a heating apparatus is further disposed inside the deposition reaction chamber to heat a to-be-deposited substrate pre-coated with a precursor BX2 thin film containing a perovskite precursor BX2 material;
• wherein the precursor BX2 material is a metal halide material, the precursor AX material powder is an organic halide powder material, A is a monovalent cation selected from the group consisting of methylamino CH3NH3+, ethylamino CH3CH2NH3+, formamidino CH(NH2)2+, acetamidino CH3C(NH2)2+, Na+, K+, Rb+ and Cs+, B is a divalent metal cation selected from the group consisting of lead, tin, tungsten, copper, zinc, gallium, germanium, arsenic, selenium, rhodium, palladium, silver, cadmium, indium, antimony, osmium, iridium, platinum, gold, mercury, thallium, bismuth and polonium, X is a monovalent anion selected from the group consisting of iodine, bromine, chlorine and astatine, and a deposition amount of the precursor AX material deposited in each deposition is 1/n of a total deposition amount required to form a complete perovskite thin film, and wherein the 1/n of the total deposition amount is allowed to fully react before a next deposition, and n refers to a number of unit deposition working positions.