C23C 14/08
Oxides
Official title: Oxides (C23C14/10 takes precedence)
C23C14/08 (Oxides) appears on 3,448 US grants and 4,243 published applications in this corpus.
Search patents in C23C- Granted patents
- 3,448
- Published applications
- 4,243
- Assignees
- 1,444
- Inventors
- 8,306
- Latest grant
- 29 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 2 | 0 |
| 1977 | 10 | 0 |
| 1978 | 1 | 0 |
| 1979 | 3 | 0 |
| 1980 | 5 | 0 |
| 1981 | 3 | 0 |
| 1982 | 5 | 0 |
| 1983 | 7 | 0 |
| 1984 | 7 | 0 |
| 1985 | 5 | 0 |
| 1986 | 6 | 0 |
| 1987 | 14 | 0 |
| 1988 | 11 | 0 |
| 1989 | 20 | 0 |
| 1990 | 28 | 0 |
| 1991 | 32 | 0 |
| 1992 | 35 | 0 |
| 1993 | 49 | 0 |
| 1994 | 41 | 0 |
| 1995 | 43 | 0 |
| 1996 | 41 | 0 |
| 1997 | 48 | 0 |
| 1998 | 61 | 0 |
| 1999 | 58 | 0 |
| 2000 | 58 | 0 |
| 2001 | 67 | 37 |
| 2002 | 69 | 66 |
| 2003 | 74 | 104 |
| 2004 | 74 | 102 |
| 2005 | 50 | 107 |
| 2006 | 55 | 117 |
| 2007 | 62 | 101 |
| 2008 | 51 | 135 |
| 2009 | 56 | 172 |
| 2010 | 89 | 195 |
| 2011 | 100 | 191 |
| 2012 | 105 | 215 |
| 2013 | 116 | 175 |
| 2014 | 129 | 208 |
| 2015 | 124 | 240 |
| 2016 | 143 | 234 |
| 2017 | 191 | 273 |
| 2018 | 179 | 211 |
| 2019 | 175 | 193 |
| 2020 | 165 | 222 |
| 2021 | 126 | 208 |
| 2022 | 138 | 202 |
| 2023 | 162 | 187 |
| 2024 | 143 | 157 |
| 2025 | 140 | 125 |
| 2026 | 72 | 66 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
- C23C 14/083Of refractory metals or yttrium977
- C23C 14/086Of zinc, germanium, cadmium, indium, tin, thallium or bismuth911
- C23C 14/081Of aluminium, magnesium or beryllium566
- C23C 14/087Of copper or solid solutions thereof214
- C23C 14/088Of the type abo3 with a representing alkali, alkaline earth metal or204
- C23C 14/085Of iron group metals121
- C23C 14/082Of alkaline earth metals52
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Most cited
By later US patents
- Oxide thin film4,015US 6,294,274 B1TDK Corporation · 2001
- Lanthanide oxide / hafnium oxide dielectric layers627US 7,192,824 B2Micron Technology, Inc. · 2007
- Doped zirconia, or zirconia-like, dielectric film transistor structure and deposition method for same626US 6,297,539 B1Sharp Laboratories of America, Inc. · 2001
- Lanthanide oxide / hafnium oxide dielectric layers601US 7,312,494 B2Micron Technology, Inc. · 2007
- System and method for forming a gate dielectric598US 6,858,547 B2APPLIED Materials.Inc. · 2005