Method of forming a capacitor

A method of forming a capacitor having a capacitor dielectric layer comprising ABO3, where “A” is selected from the group consisting of Sn and Group IIA metal elements and mixtures thereof, where “B” is selected from the group consisting of Group IVA elements and mixtures thereof, the method comprising:

• providing a sputtering target comprising ABO3 and a substrate to be deposited upon within a chamber;
• feeding a sputtering gas to the chamber under subatmospheric pressure conditions effective to sputter the target and physical vapor deposit an ABO3-comprising dielectric layer over the substrate;
• during at least some of the feeding, continuously varying subatmospheric pressure within the chamber effective to produce a gradient in concentration of B across at least a majority of the thickness of the deposited layer and where higher comparative pressure produces greater concentration of B in the deposited layer;
• and
• incorporating the ABO3-comprising dielectric layer into a capacitor, the ABO3-comprising dielectric layer comprising a capacitor dielectric layer of the capacitor and having a dielectric constant k of at least 20 in the capacitor.

A method of forming a capacitor having a capacitor dielectric layer comprising ABO3, where “A” is selected from the group consisting of Sn and Group IIA metal elements and mixtures thereof, where “B” is selected from the group consisting of Group IVA elements and mixtures thereof, the method comprising:

• providing a sputtering target comprising ABO3 and a substrate to be deposited upon within a chamber;
• feeding a sputtering gas to the chamber under first subatmospheric pressure conditions effective to sputter the target and physical vapor deposit a substantially homogenous first portion of an ABO3-comprising dielectric layer over the substrate, the first conditions comprising a substantially constant first pressure;
• while feeding the sputtering gas, changing the first subatmospheric pressure conditions to second subatmospheric pressure conditions that at least include a substantially constant second pressure which is different from the first pressure effective to deposit a substantially homogenous second portion of the ABO3-comprising dielectric layer on the first portion, the first and second portions having different concentrations of B and where higher comparative pressure produces greater concentration of B;
• and
• incorporating the ABO3-comprising dielectric layer into a capacitor, the ABO3-comprising dielectric layer comprising a capacitor dielectric layer of the capacitor and having a dielectric constant k of at least 20 in the capacitor.

A method of forming a capacitor having a capacitor dielectric layer comprising ABO3, where “A” is selected from the group consisting of Sn and Group IIA metal elements and mixtures thereof, where “B” is selected from the group consisting of Group IVA elements and mixtures thereof, the method comprising:

• providing a sputtering target comprising ABO3 and a substrate to be deposited upon within a chamber;
• feeding a sputtering gas to the chamber under subatmospheric pressure conditions effective to sputter the target and physical vapor deposit an ABO3-comprising dielectric layer over the substrate;
• during the feeding, manipulating a vacuum pressure control device associated with the chamber to change subatmospheric deposition pressure within the chamber effective to produce different concentrations of B at different elevations in the deposited layer and where higher comparative pressure produces greater concentration of B in the deposited layer;
• and
• incorporating the ABO3-comprising dielectric layer into a capacitor, the ABO3-comprising dielectric layer comprising a capacitor dielectric layer of the capacitor and having a dielectric constant k of at least 20 in the capacitor.