Thin-film piezoelectric material element

A thin-film piezoelectric material element arranged on a thin-film piezoelectric material substrate,

• wherein the thin-film piezoelectric material substrate comprises:
• an insulator on Si substrate including a substrate including silicon and an insulating layer on a surface of the substrate;
• wherein the thin-film piezoelectric material element comprises a thin-film laminated part on a top surface of the insulating layer,
• wherein the thin-film laminated part comprises:
• a YZ seed layer including yttrium and zirconium, and formed on the top surface of the insulating layer of the insulator on Si substrate;
• a lower electrode film laminated on the YZ seed layer;
• a piezoelectric material film including lead zirconate titanate, shown by a formula Pb (ZrxTi(1-x)) O3(0≤x≤1), and laminated on the lower electrode film;
• and
• an upper electrode film laminated on the piezoelectric material film,
• wherein the piezoelectric material film is an epitaxial film,
• wherein the piezoelectric material film has diffraction intensity peaks of a (001) plane and a (002) plane, the lower electrode film includes Pt and has a diffraction intensity peak of a Pt (200) plane and the YZ seed layer has a diffraction intensity peak of a (400) plane,
• wherein the thin-film laminated part further includes a stress balancing film, laminated on the upper side of the upper electrode film.

A thin-film piezoelectric material element arranged on a thin-film piezoelectric material substrate,

• wherein the thin-film piezoelectric material substrate comprises:
• an insulator on Si substrate including a substrate including silicon and an insulating layer on a surface of the substrate;
• wherein the thin-film piezoelectric material element comprises a thin-film laminated part on a top surface of the insulating layer,
• wherein the thin-film laminated part comprises:
• a YZ seed layer including yttrium and zirconium, and formed on the top surface of the insulating layer of the insulator on Si substrate;
• a lower electrode film laminated on the YZ seed layer;
• a piezoelectric material films layer, laminated on the lower electrode film;
• and
• an upper electrode film laminated on the piezoelectric material films layer,
• wherein the piezoelectric material films layer includes a first piezoelectric material film and a second piezoelectric material film;
• wherein the first piezoelectric material film and the second piezoelectric material film respectively include lead zirconate titanate, shown by a formula Pb (ZrxTi(1-x)) O3(0≤x≤1), and are epitaxial films,
• wherein the first piezoelectric material film and second piezoelectric material film respectively have diffraction intensity peaks of a (001) plane and a (002) plane, the lower electrode film includes Pt and has a diffraction intensity peak of a Pt (200) plane and the YZ seed layer has a diffraction intensity peak of a (400) plane.