Methods of forming a capacitor

A method of forming a capacitor having a capacitor dielectric layer comprising ABO3, where “A” is selected from the group consisting of Group IIA and Group IVB metal elements and mixtures thereof, where “B” is selected from the group consisting of Group IVA elements and mixtures thereof, the method comprising:

• feeding a plurality of precursors comprising A, B and O to a chamber having a substrate positioned therein under conditions effective to chemical vapor deposit a an ABO3-comprising dielectric layer over the substrate;
• during at least some of the feeding, continuously varying pressure within the chamber effective to produce a gradient in concentration of B across at least a majority portion of the thickness of the deposited layer and where higher comparative pressure produces greater concentration of B in the deposited layer;
• and
• incorporating the ABO3-comprising dielectric layer into a capacitor, the ABO3-comprising dielectric layer comprising a capacitor dielectric layer of the capacitor and having a dielectric constant k of at least 20 in the capacitor.

A method of forming a capacitor having a capacitor dielectric layer comprising ABO3, where “A” is selected from the group consisting of Group IIA and Group IVB metal elements and mixtures thereof, where “B” is selected from the group consisting of Group IVA elements and mixtures thereof, the method comprising:

• feeding a plurality of precursors comprising A, B and O to a chamber having a substrate positioned therein under first conditions effective to chemical vapor deposit a substantially homogenous first portion of an ABO3-comprising dielectric layer over the substrate, the first conditions comprising a substantially constant first pressure;
• while feeding the plurality of precursors, changing the first conditions to second conditions that at least include a substantially constant second pressure which is different from the first pressure effective to deposit a substantially homogenous second portion of the ABO3-comprising dielectric layer on the first portion, the first and second portions having different concentrations of B and where higher comparative pressure produces greater concentration of B;
• and
• incorporating the ABO3-comprising dielectric layer into a capacitor, the ABO3-comprising dielectric layer comprising a capacitor dielectric layer of the capacitor and having a dielectric constant k of at least 20 in the capacitor.

A method of forming a-capacitor having a capacitor dielectric layer comprising ABO3, where “A” is selected from the group consisting of Group IIA and Group IVB metal elements and mixtures thereof, where “B” is selected from the group consisting of Group IVA elements and mixtures thereof, the method comprising:

• feeding a plurality of precursors comprising A, B and O to a chamber having a substrate positioned therein under subatmospheric pressure conditions effective to deposit an ABO3-comprising dielectric layer over the substrate;
• during the feeding, manipulating a vacuum pressure control device associated with the chamber to change subatmospheric deposition pressure within the chamber effective to produce different concentrations of B at different elevations in the deposited layer and where higher comparative pressure produces greater concentration of B in the deposited layer;
• and
• incorporating the ABO3-comprising dielectric layer into a capacitor, the ABO3-comprising dielectric layer comprising a capacitor dielectric layer of the capacitor and having a dielectric constant k of at least 20 in the capacitor.