B81C 1/00412
Mask characterised by its behaviour during the etching process
Official title: {Mask characterised by its behaviour during the etching process, e.g. soluble masks}
B81C1/00412 (Mask characterised by its behaviour during the etching process) appears on 24 US grants and 18 published applications in this corpus.
Search patents in B81C- Granted patents
- 24
- Published applications
- 18
- Assignees
- 18
- Inventors
- 57
- Latest grant
- 11 Nov 2025
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2001 | 2 | 1 |
| 2002 | 0 | 0 |
| 2003 | 1 | 0 |
| 2004 | 2 | 2 |
| 2005 | 1 | 2 |
| 2006 | 0 | 0 |
| 2007 | 1 | 0 |
| 2008 | 0 | 0 |
| 2009 | 0 | 0 |
| 2010 | 0 | 0 |
| 2011 | 0 | 0 |
| 2012 | 0 | 0 |
| 2013 | 0 | 0 |
| 2014 | 0 | 0 |
| 2015 | 0 | 5 |
| 2016 | 5 | 1 |
| 2017 | 3 | 0 |
| 2018 | 1 | 1 |
| 2019 | 1 | 3 |
| 2020 | 2 | 0 |
| 2021 | 0 | 0 |
| 2022 | 1 | 2 |
| 2023 | 0 | 0 |
| 2024 | 1 | 1 |
| 2025 | 3 | 0 |
By publication year.
Recent patents
- Etching method11 Nov 2025US 12,469,711 B2Ulvac, Inc.
- Managing trench depth in integrated systems11 Mar 2025US 12,249,540 B1Ciena Corporation
- Method for etching gaps of unequal width7 Jan 2025US 12,187,605 B2Murata Manufacturing Co., Ltd.
- Etching method25 Jun 2024US 12,020,942 B2Ulvac, Inc.
- Managing trench depth in integrated systems18 Jan 2022US 11,227,790 B1Ciena Corporation
- Etching method12 Sep 2024US 2024/0304453 A1Ulvac, Inc.
- Method for etching gaps of unequal width27 Oct 2022US 2022/0340415 A1Murata Manufacturing Co., Ltd.
- Etching method27 Oct 2022US 2022/0344167 A1Ulvac, Inc.
- Method of etching microelectronic mechanical system features in a silicon wafer31 Oct 2019US 2019/0333773 A1The Board of Trustees of the Leland Stanford Junior University
- Method of etching microelectronic mechanical system features in a silicon wafer19 Sep 2019US 2019/0287810 A1The Board of Trustees of the Leland Stanford Junior University
Most cited
By later US patents
- Method of etching a wafer layer using a sacrificial wall to form vertical sidewall15US 6,242,363 B1ADC Telecommunications, Inc. · 2001
- Method for forming a cavity structure on SOI substrate and cavity structure formed on SOI substrate11US 6,930,366 B2Valtion Teknillinen Tutkimuskeskus · 2005
- Wafer processing equipment having exposable sensing layers9US 9,975,758 B2APPLIED Materials.Inc. · 2018
- Wafer processing equipment having exposable sensing layers6US 9,725,302 B1APPLIED Materials.Inc. · 2017
- Managing trench depth in integrated systems4US 11,227,790 B1Ciena Corporation · 2022