Etching method
AssigneeUlvac, Inc.
InventorsTaichi Suzuki, Yasuhiro Morikawa, Kenta Doi, Toshiyuki Nakamura
Life of this patent
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Abstract
An etching method of the invention includes: a resist pattern-forming step of forming a resist layer on a target object, the resist layer being formed of a resin, the resist layer having a resist pattern; an etching step of etching the target object via the resist layer having the resist pattern; and a resist protective film-forming step of forming a resist protective film on the resist layer. The etching step is repetitively carried out multiple times. After the etching steps are repetitively carried out multiple times, the resist protective film-forming step is carried out.
Claims6
An etching method comprising:
- a resist pattern-forming step of forming a resist layer on a target object, the resist layer being formed of a resin, the resist layer having a resist pattern;
- an etching step of etching the target object via the resist layer having the resist pattern;
- and
- a resist protective film-forming step of forming a resist protective film on the resist layer, wherein
- the etching step is repetitively carried out multiple times, and
- after the etching steps are repetitively carried out multiple times, the resist protective film-forming step is carried out, and
- the resist protective film-forming step is not carried out until an etching state of the target object obtained by the etching step becomes a predetermined state.
Dependencies are inferred from the claim text.