Etching method

An etching method comprising:

• a resist pattern-forming step of forming a resist layer on a target object, the target object being made of silicon, the resist layer being formed of a resin, the resist layer having a resist pattern;
• a deposition step forming a deposition layer on the target object using a first gas in accordance with the resist pattern, the first gas containing fluorocarbon,
• an etching step of etching the target object via the resist layer having the resist pattern, the etching step being to be carried out after the deposition step,
• the etching step including a dry etching treatment carried out with respect to the target object using a second gas in accordance with the resist pattern;
• an ashing step to be carried out after the etching step, the ashing step using a third gas;
• and
• a resist protective film-forming step of forming a resist protective film on the resist layer, wherein
• the etching step is repetitively carried out multiple times,
• a processing gas used in the resist protective film-forming step, that includes a gas capable of forming SixOyαz, wherein a is any one of F, Cl, H, and CkHl;
• and wherein
• each of x, y, z, k, and l is a selected non-zero value;
• and
• wherein after the etching steps are repetitively carried out multiple times, the resist protective film-forming step is performed.