B81B 2203/0392
Profiles not provided for in b81b2203/0376 - b81b2203/0384
Official title: profiles not provided for in B81B2203/0376 - B81B2203/0384
B81B2203/0392 (Profiles not provided for in b81b2203/0376 - b81b2203/0384) appears on 53 US grants and 71 published applications in this corpus.
Search patents in B81B- Granted patents
- 53
- Published applications
- 71
- Assignees
- 44
- Inventors
- 156
- Latest grant
- 9 Jun 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2000 | 1 | 0 |
| 2001 | 0 | 4 |
| 2002 | 2 | 0 |
| 2003 | 1 | 3 |
| 2004 | 2 | 2 |
| 2005 | 1 | 0 |
| 2006 | 1 | 1 |
| 2007 | 1 | 0 |
| 2008 | 0 | 0 |
| 2009 | 0 | 2 |
| 2010 | 0 | 3 |
| 2011 | 2 | 7 |
| 2012 | 2 | 3 |
| 2013 | 2 | 4 |
| 2014 | 2 | 1 |
| 2015 | 4 | 4 |
| 2016 | 3 | 3 |
| 2017 | 3 | 7 |
| 2018 | 2 | 4 |
| 2019 | 4 | 4 |
| 2020 | 6 | 4 |
| 2021 | 2 | 1 |
| 2022 | 1 | 5 |
| 2023 | 5 | 3 |
| 2024 | 2 | 4 |
| 2025 | 2 | 2 |
| 2026 | 2 | 0 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Method for forming semiconductor structure9 Jun 2026US 12,649,652 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Method for machining a workpiece17 Mar 2026US 12,576,460 B2TRUMPF Laser- und Systemtechnik GmbH
- Anti-stiction bottom cavity surface for micromachined ultrasonic transducer devices1 Apr 2025US 12,263,506 B2Bfly Operations, Inc.
- Top notch slit profile for MEMS device25 Feb 2025US 12,238,478 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor structure and method for forming the same25 Jun 2024US 12,017,908 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Top notch slit profile for mems device9 Oct 2025US 2025/0317694 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Anti-stiction bottom cavity surface for micromachined ultrasonic transducer devices17 Jul 2025US 2025/0229292 A1Bfly Operations, Inc.
- Top notch slit profile for mems device14 Nov 2024US 2024/0381034 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Connection line structure and forming method thereof24 Oct 2024US 2024/0351859 A1Wuhan Neuracom Technology Development Co., Ltd.
- Method for forming semiconductor structure29 Aug 2024US 2024/0286889 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Wide dynamic range capacitive transducer84US 6,151,967 AHorizon Technology Group · 2000
- Integrated flow cell with semiconductor oxide tubing68US 8,213,015 B2Agilent Technologies, Inc. · 2012
- Method to force-balance capacitive transducers62US 6,496,348 B22002
- Linear capacitance detection circuit12US 6,456,477 B12002
- Method of fabricating a device having a desired non-planar surface or profile and device produced thereby12US 6,884,732 B2The Regents of the University of Michigan · 2005