Method for forming semiconductor structure
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChing-Kai Shen, Jung-Kuo Tu, Wei-Cheng Shen, Yi-Chuan Teng
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Abstract
A method for forming a semiconductor structure includes following operations. An interconnect structure is formed over a substrate. The interconnect structure includes a top conductive layer. A dielectric structure is formed over the interconnect structure. The dielectric structure is patterned to simultaneously form a cavity and a protrusion in the cavity. A MEMS substrate is bonded to the dielectric structure to seal the cavity. The protrusion is separated from the MEMS substrate.
Claims20
A method for forming a semiconductor structure, comprising:
- forming an interconnect structure over a substrate, wherein the interconnect structure comprises a top conductive layer;
- forming a dielectric structure over the interconnect structure;
- patterning the dielectric structure to simultaneously form a cavity and a protrusion in the cavity;
- and
- bonding a microelectromechanical system (MEMS) substrate to the dielectric structure to seal the cavity, wherein the MEMS substrate comprises a movable membrane,
- wherein the protrusion is separated from the MEMS substrate,
- wherein the movable membrane of the MEMS substrate overlaps the top conductive layer to form a capacitive micro-machined ultrasonic transducer (CMUT) cell, the top conductive layer is a bottom electrode of the CMUT cell, and the movable membrane is a top electrode of the CMUT cell.
A method for forming a semiconductor structure, comprising:
- forming an interconnect structure over a substrate;
- forming a dielectric structure over the interconnect structure;
- patterning the dielectric structure to simultaneously form a cavity and a protrusion in the cavity;
- forming a conductive layer over the protrusion;
- forming a dielectric layer to entirely cover the conductive layer;
- and
- bonding a MEMS substrate to the dielectric structure to seal the cavity, wherein the MEMS substrate comprises a movable membrane,
- wherein protrusion, the conductive layer and the dielectric layer are separated from the MEMS substrate,
- wherein the movable membrane of the MEMS substrate overlaps the conductive layer to form a CMUT cell, the conductive layer is a bottom electrode of the CMUT cell, and the movable membrane is a top electrode of the CMUT cell.
A method for forming a semiconductor structure, comprising:
- forming an interconnect structure over a substrate, wherein the interconnect structure comprises a bottom electrode;
- forming a dielectric structure over the interconnect structure;
- using a grayscale mask to pattern the dielectric structure to simultaneously form a cavity and a protrusion in the cavity, wherein the protrusion overlaps the bottom electrode;
- and
- bonding a MEMS substrate to the dielectric structure to seal the cavity, wherein the MEMS substrate comprises a top electrode overlapping the bottom electrode.
Dependencies are inferred from the claim text.