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US 12,017,908 B2Granted
Semiconductor structure and method for forming the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChing-Kai Shen, Jung-Kuo Tu, Wei-Cheng Shen, Yi-Chuan Teng
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Abstract
A semiconductor structure includes a substrate, a MEMS substrate, a dielectric structure between the substrate and the MEMS substrate, a cavity in the dielectric structure, an electrode over the substrate, and a protrusion disposed in the cavity. The MEMS substrate includes a movable membrane, and the cavity is sealed by the movable membrane. A height of the protrusion is less than a depth of the cavity.
Claims20
A semiconductor structure, comprising:
- a substrate;
- a microelectromechanical system (MEMS) substrate over a surface of the substrate, wherein the MEMS substrate comprises a movable membrane;
- a dielectric structure between the substrate and the MEMS substrate;
- a cavity in the dielectric structure, wherein the cavity is sealed by the movable membrane;
- an electrode over the substrate;
- and
- a dielectric protrusion disposed in the cavity;
- wherein a height of the dielectric protrusion is less than a depth of the cavity, and the dielectric protrusion overlaps the electrode.
5 more elements
A semiconductor structure, comprising:
- a substrate;
- a microelectromechanical system (MEMS) substrate over a surface of the substrate;
- a dielectric structure between the substrate and the MEMS substrate;
- a cavity in the dielectric structure;
- an electrode over the substrate;
- and
- a plurality of dielectric pillars in the cavity;
- wherein a height of each dielectric pillar is less than a depth of the cavity, and each dielectric pillar overlaps the electrode.
5 more elements
A semiconductor structure, comprising:
- a substrate;
- a microelectromechanical system (MEMS) substrate over a surface of the substrate;
- a dielectric structure between the substrate and the MEMS substrate;
- a cavity in the dielectric structure;
- an electrode over the substrate;
- a protrusion disposed in the cavity;
- and
- a dielectric layer disposed over the protrusion,
- wherein the electrode and the dielectric layer are conformal to a configuration of the protrusion,
- wherein the electrode is disposed between the protrusion and the dielectric layer, and the electrode and the dielectric layer overlap the protrusion.
7 more elements
Dependencies are inferred from the claim text.