IPS Corporation
Kyungki-do, KR· latest recorded location
IPS Corporation is named on 15 US grants and 17 published applications in this corpus. Its most frequent classification is C23C (Coating metallic material).
- Granted patents
- 15
- Published applications
- 17
- Inventors
- 35
- Granted in 2026 so far
- 0
- Most recent grant
- 8 Jul 2014
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2001 | 2 | 0 |
| 2002 | 0 | 5 |
| 2003 | 2 | 0 |
| 2004 | 2 | 2 |
| 2005 | 2 | 0 |
| 2006 | 0 | 2 |
| 2007 | 2 | 1 |
| 2008 | 1 | 2 |
| 2009 | 1 | 1 |
| 2010 | 2 | 1 |
| 2011 | 0 | 3 |
| 2012 | 0 | 0 |
| 2013 | 0 | 0 |
| 2014 | 1 | 0 |
By publication year.
Technology areas
Share of 32 documents
- C23CCoating metallic material29
- H10PGeneric processes or apparatus for the manufacture or treatment of devices covered12
- H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by6
- Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests6
- Y10TTechnical subjects covered by former us classification4
- H10BElectronic memory devices2
- H10DInorganic electric semiconductor devices2
- H10NElectric solid-state devices not otherwise provided for2
- H01JElectric discharge tubes or discharge lamps1
- H10FSolar cells and light sensors1
Recent patents
- Method of forming chalcogenide thin film8 Jul 2014US 8,772,077 B2
- Method of depositing chalcogenide film for phase-change memory28 Sep 2010US 7,803,656 B2
- Method of depositing thin film31 Aug 2010US 7,785,664 B2
- In-situ thin-film deposition method29 Dec 2009US 7,638,437 B2
- Chemical vapor deposition method12 Aug 2008US 7,410,676 B2
- Cleaning method of apparatus for depositing carbon containing film19 May 2011US 2011/0114114 A1
- Solar cell and method of fabricating the same14 Apr 2011US 2011/0083735 A1
- Method of forming chalcogenide thin film3 Feb 2011US 2011/0027976 A1
- Apparatus, method for depositing thin film on wafer and method for gap-filling trench using the same29 Jul 2010US 2010/0190341 A1
- Method of depositing chalcogenide film for phase-change memory9 Apr 2009US 2009/0093083 A1
Most cited
By later US patents
- Apparatus and method for depositing thin film on wafer using atomic layer deposition131US 6,579,372 B22003
- Apparatus for depositing thin films on semiconductor wafers130US 6,183,563 B22001
- Apparatus for depositing thin films on semiconductor wafer by continuous gas injection100US 6,231,672 B12001
- Apparatus and method for depositing thin film on wafer using atomic layer deposition39US 6,573,184 B22003
- Atomic layer deposition (ALD) thin film deposition equipment having cleaning apparatus and cleaning method16US 6,796,316 B22004