Method of depositing chalcogenide film for phase-change memory
AssigneeIPS Corporation
InventorsYu-Min Jung, Ki-Hoon Lee
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Abstract
Provided is a method of depositing a chalcogenide film for phase-change memory. When the chalcogenide film for phase-change memory is deposited through a method using plasma such as plasma enhanced chemical vapor deposition (PECVD) or plasma enhanced atomic layer deposition (PEALD), a plasma reaction gas including He is used such that the crystallinity of the chalcogenide film is adjusted and the grain size and morphology of the deposited film are adjusted.
Claims6
A method of depositing a chalcogenide film for phase-change memory using plasma, wherein the chalcogenide film is deposited using a reaction gas including He as a plasma reaction gas thereby affecting the morphology of the chalcogenide film.
Dependencies are inferred from the claim text.