Apparatus and method for depositing thin film on wafer using atomic layer deposition

An atomic layer deposition (ALD) thin film deposition apparatus comprising:

• a reactor in which a wafer is mounted and a thin film is deposited on the wafer;
• a first reaction gas supply portion for supplying a first reaction gas to the reactor;
• a second reaction gas supply portion for supplying a second reaction gas to the reactor;
• a first reaction gas supply line for connecting the first reaction gas supply portion to the reactor;
• a second reaction gas supply line for connecting the second reaction gas supply portion to the reactor;
• a first inert gas supply line for supplying an inert gas from an inert gas supply source to the first reaction gas supply line;
• a second inert gas supply line for supplying the inert gas from the inert gas supply source to the second reaction gas supply line;
• and
• an exhaust line for exhausting the gas from the reactor;
• wherein the reactor comprises a first connection line for supplying the first reaction gas and/or the inert gas to the wafer through a plurality of spray holes, and a second connection line for supplying the second reaction gas and/or the inert gas to the wafer through a plurality of nozzles such that the first and second reaction gases are alternatively supplied to the reactor, while the inert gas is continuously supplied to the reactor.