US 2010/0190341 A1 · APPARATUS, METHOD FOR DEPOSITING THIN FILM ON WAFER AND METHOD FOR GAP-FILLING TRENCH USING THE SAME

Abstract

Provided are an apparatus and method for depositing a thin film, and a method for gap-filling a trench in a semiconductor device. The thin film depositing apparatus includes a plurality of substrates provided on the same space inside a reactor, wherein deposition of the thin film and partial etching of the deposited thin film are repeated to form the thin film on the plurality of substrates by exposing the substrates to two or more source gases and an etching gas supplied together at predetermined time intervals while rotating the substrates. According to exemplary embodiments, it is possible to concurrently or alternatively perform deposition and etching of a thin film, so that a thin film with good gap-fill capability can be deposited.

Claims24

Dependent claims

An apparatus for depositing a thin film comprising:

a reactor;
and
a plurality of substrates provided on the same space inside the reactor,
wherein deposition of the thin film and partial etching of the deposited thin film are repeated to form the thin film on the plurality of substrates by exposing the plurality of substrates to two or more source gases and an etching gas supplied together at time intervals while rotating the plurality of substrates.

1 more element

A method for depositing a thin film comprising:

(b1) loading a plurality of substrates on a substrate supporting plate provided with a plurality of substrate loading parts and rotatably installed inside a reactor;
(b2) rotating the substrate supporting plate such that the plurality of substrates are sequentially exposed to a first source gas injection block, a purge gas injection block, a second source gas injection block, a purge gas injection block, an etching gas injection block and a purge gas injection block, which are arranged radially;
(b3) depositing a thin film by supplying a first source gas, a second source gas and a purge gas onto the substrate supporting plate together through the first source gas injection block, the second source gas injection block and the purge gas injection block;
(b4) after the thin film is deposited at a predetermined thickness, stopping the supply of the first source gas and the second source gas, and supplying an etching gas through the etching gas injection block to etch the deposited thin film;
(b5) after an elapse of a predetermined time, stopping the supply of the etching gas and supplying the first source gas and the second source gas onto the substrate supporting plate together through the first source gas injection block and the second source gas injection block to deposit the thin film;
and
(b6) sequentially repeating the operation (b4) and the operation (b5) at least once.

4 more elements

Dependencies are inferred from the claim text.

Facts

Application

12/669,498Filed 14 Jul 2008

Priority

KR 10-2007-007205219 Jul 2007

Published

29 Jul 2010

Term ends

Not estimatedThe source records don’t support an estimate.

Classification16 codes

C23C 16/4584
The substrate being supported substantially horizontally: the substrate being rotated
C23C 16/045
Coating on selected surface areas, e.g. using masks: coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
C23C 16/4554
Use of plasma, radiation or electromagnetic fields: plasma being used non-continuously in between ALD reactions
C23C 16/45548
Characterized by the apparatus: having arrangements for gas injection at different locations of the reactor for each ALD half-reaction

Apparatus, method for depositing thin film on wafer and method for gap-filling trench using the same

Life of this patent

Apparatus, method for depositing thin film on wafer and method for gap-filling trench using the same

Life of this patent

Abstract

Claims24