US 7,785,664 B2 · Method of depositing thin film

Abstract

A method is provided for depositing thin films in which the thin films are continuously deposited into one chamber and 1-6 wafers are loaded into the chamber. In the method, a process gap between a shower head or a gas injection unit and a substrate is capable of being controlled. The method comprises (a) loading at least one substrate into the chamber, (b) depositing the Ti thin film onto the substrate, adjusted so that a first process gap is maintained, (c) moving a wafer block so that the first process gap is changed into a second process gap in order to control the process gap of the substrate upon which the Ti thin film is deposited, (d) depositing the TiN thin film onto the substrate, moved to set the second process gap, and (e) unloading the substrate upon which the Ti/TiN thin films are deposited.

Claims23

Dependent claims

A method of depositing Ti/TiN thin films onto a substrate in a chamber for depositing a semiconductor thin film, in which a process gap between a shower head or a gas injection unit and the substrate is capable of being controlled, comprising:

(a) loading at least one substrate into the chamber;
(b) depositing the Ti thin film onto the substrate, adjusted so that a first process gap is maintained, and moving the wafer block so that the first process gap is changed into a first' process gap and post-treating the Ti thin film to stabilize the Ti thin film before depositing the TiN thin film, wherein the first' process gap is selected to avoid the formation of hole marks on the substrate during the post-treating;
(c) moving a wafer block so that the first process gap is changed into a second process gap in order to control the process gap of the substrate upon which the Ti thin film is deposited;
(d) depositing the TiN thin film onto the substrate, moved to set the second process gap;
and
(e) unloading the substrate upon which the Ti/TiN thin films are deposited.

3 more elements

(a) loading a Nth single substrate or a Nth batch of substrates into the chamber;
(b) depositing the Ti thin film onto the substrate, adjusted so that a first process gap is maintained;
(c) moving a wafer block upon which the substrate is mounted so that the first process gap is changed into a first' process gap, and post-treating the Ti thin film to stabilize the Ti thin film before depositing the TiN thin film, wherein the first' process gap is selected to avoid the formation of hole marks on the substrate during the post-treating;
(d) moving the wafer block so that the first' process gap is changed into a second process gap;
(e) depositing the TiN thin film onto the substrate, moved to set the second process gap;
(f) unloading the substrate upon which the Ti/TiN thin films are deposited;
(g) repeating the steps (a) to (e) K times;
(h) dry cleaning the chamber;
and
(i) loading a (N+1)th single substrate or a (N+1)th batch of substrates into the chamber.

7 more elements

Dependencies are inferred from the claim text.

Method of depositing thin film

Life of this patent

Method of depositing thin film

Life of this patent

Abstract

Claims23