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AssigneeIPS Corporation
InventorYoung-Hoon Park
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An atomic layer desposition (ALD) thin film deposition equipment having a cleaning apparatus, this equipment including a reactor in which a wafer is mounted and a thin film is deposited on the wafer, a first reaction gas supply portion for supplying a first reaction gas to the reactor, a second reaction gas supply portion for supplying a second reaction gas to the reactor, a first reaction gas supply line for connecting the first reaction gas supply portion to the reactor, a second reaction gas supply line for connecting the second reaction gas supply portion to the reactor, a first inert gas supply line for supplying an inert gas from inert gas supply source to the first reaction gas supply line, a second inert gas supply line for supplying the inert gas from the inert gas supply source to the second reaction gas supply line, an exhaust line for exhausting the gas from the reactor to the outside, and a cleaning gas supply line connected to the first reaction gas supply line for supplying a cleaning gas for cleaning the reactor.
A cleaning method for an ALD thin film deposition equipment comprising a reactor including a reactor block on which a wafer is mounted, a wafer block installed within the reactor block, on which the wafer is seated, and a diffusion plate having a plurality of spray hole formed over the wafer block and a plurality of nozzles slanted toward the inner sidewall of the reactor block to spray a gas toward the edges of the wafer block, the cleaning method comprising:
Dependencies are inferred from the claim text.