In-situ thin-film deposition method
AssigneeIPS Corporation
InventorsTae Wook Seo, Young Hoon Park
Life of this patent
Estimating the term…
Abstract
Provided is an in-situ thin-film deposition method in which a TiSix/Ti layer or TiSix/Ti/TiN layer can be continuously deposited. The method serves to deposit a thin layer as a resistive contact and barrier on a loaded wafer and is performed in a thin-film deposition apparatus including a transfer chamber having a robot arm therein and a plurality of chambers installed as a cluster type on the transfer chamber. The method includes depositing a TiSix layer on the wafer by supplying a first reactive gas containing Ti and a second reactive gas containing Si to a first chamber; and transferring the wafer to a second chamber using the transfer chamber and depositing a TiN layer on the TiSix layer.
Claims9
An in-situ thin-film deposition method for depositing a thin layer as a resistive contact and barrier on a loaded wafer, which is performed in a thin-film deposition apparatus comprising a transfer chamber including a robot arm and a plurality of chambers installed as a cluster type on the transfer chamber, the method comprising:
- depositing a TiSix layer on the wafer by supplying a first reactive gas containing Ti and a second reactive gas containing Si to a first chamber;
- and
- transferring the wafer to a second chamber using the transfer chamber and depositing a TiN layer on the TiSix layer,
- wherein when the TiSix layer is deposited using a plasma ALD process, continuously applying plasma to the first chamber by supplying power to the first chamber and continuously spraying the second reactive gas onto the wafer are performed at the same time,
- wherein during the continuous spraying of the second reactive gas, pulse-spraying the first reactive gas and purging the first reactive gas that is not absorbed on the wafer are repeated in several cycles until the TiSix layer is deposited on the wafer.
An in-situ thin-film deposition method for depositing a thin layer as a resistive contact and barrier on a loaded wafer, which is performed in a thin-film deposition apparatus comprising a transfer chamber including a robot arm and first, second, third, and fourth chambers installed as a cluster type on the transfer chamber, the method comprising:
- depositing a TiSix layer on the wafer by supplying a first reactive gas containing Ti and a second reactive gas containing Si to the first chamber;
- depositing a Ti layer on the TiSix layer, which is a glue layer;
- and
- transferring the wafer to the third chamber and depositing a TiN layer on the Ti layer,
- wherein when the TiSix layer is deposited using a plasma ALD process, continuously applying plasma to the first chamber by supplying power to the first chamber and continuously spraying the second reactive gas onto the wafer are performed at the same time,
- wherein during the continuous spraying of the second reactive gas, pulse-spraying the first reactive gas and purging the first reactive gas that is not absorbed on the wafer are repeated in several cycles until the TiSix layer is deposited on the wafer.
Dependencies are inferred from the claim text.