Y10S 977/765
With specified cross-sectional profile
Official title: with specified cross-sectional profile, e.g. belt-shaped
Y10S977/765 (With specified cross-sectional profile) appears on 49 US grants and 46 published applications in this corpus.
Search patents in Y10S- Granted patents
- 49
- Published applications
- 46
- Assignees
- 26
- Inventors
- 95
- Latest grant
- 21 Jan 2025
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1996 | 1 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 1 | 0 |
| 2000 | 0 | 0 |
| 2001 | 2 | 0 |
| 2002 | 1 | 3 |
| 2003 | 1 | 1 |
| 2004 | 0 | 3 |
| 2005 | 3 | 2 |
| 2006 | 4 | 2 |
| 2007 | 2 | 4 |
| 2008 | 2 | 8 |
| 2009 | 5 | 4 |
| 2010 | 5 | 3 |
| 2011 | 5 | 3 |
| 2012 | 4 | 0 |
| 2013 | 0 | 0 |
| 2014 | 1 | 0 |
| 2015 | 1 | 3 |
| 2016 | 1 | 1 |
| 2017 | 2 | 4 |
| 2018 | 2 | 0 |
| 2019 | 2 | 1 |
| 2020 | 1 | 1 |
| 2021 | 1 | 1 |
| 2022 | 0 | 0 |
| 2023 | 1 | 1 |
| 2024 | 0 | 0 |
| 2025 | 1 | 1 |
By publication year. Applications have been published since 2001.
Recent patents
- Semiconductor device including multi-thickness nanowires21 Jan 2025US 12,206,026 B2Samsung Electronics Co., Ltd.
- Semiconductor device including nanowires having multi-thickness regions20 Jun 2023US 11,682,735 B2Samsung Electronics Co., Ltd.
- Semiconductor device having multi-thickness nanowire11 May 2021US 11,004,985 B2Samsung Electronics Co., Ltd.
- Semiconductor device having a multi-thickness nanowire23 Jun 2020US 10,693,017 B2Samsung Electronics Co., Ltd.
- Low power embedded one-time programmable (OTP) structures13 Aug 2019US 10,381,356 B2Globalfoundries Singapore Pte. Ltd.
- Semiconductor device and method for fabricating the same10 Apr 2025US 2025/0120129 A1Samsung Electronics Co., Ltd.
- Semiconductor device5 Oct 2023US 2023/0317860 A1Samsung Electronics Co., Ltd.
- Semiconductor device29 Jul 2021US 2021/0234050 A1Samsung Electronics Co., Ltd.
- Semiconductor device and method for fabricating the same11 Jun 2020US 2020/0185539 A1Samsung Electronics Co., Ltd.
- Semiconductor device and method for fabricating the same19 Sep 2019US 2019/0288121 A1Samsung Electronics Co., Ltd.
Most cited
By later US patents
- Nanowires, nanostructures and devices fabricated therefrom394US 6,882,051 B2The Regents of the University of California · 2005
- Molecular-wire crossbar interconnect (MWCI) for signal routing and communications278US 6,314,019 B1Hewlett-Packard Company · 2001
- Methods of fabricating nanostructures and nanowires and devices fabricated therefrom247US 6,996,147 B2The Regents of the University of California · 2006
- Electromechanical memory having cell selection circuitry constructed with nanotube technology162US 6,643,165 B2Nantero, Inc. · 2003
- Device selection circuitry constructed with nanotube technology95US 7,269,052 B2Nantero, Inc. · 2007