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US 10,693,017 B2Granted
Semiconductor device having a multi-thickness nanowire
AssigneeSamsung Electronics Co., Ltd.
InventorsSeung Hun Lee, Dong Woo Kim, Dong Chan Suh, Sun Jung Kim
Life of this patent
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Abstract
A semiconductor device includes a drain, a source, a gate electrode, and a nanowire between the source and drain. The nanowire has a first section with a first thickness and a second section with a second thickness greater than the first thickness. The second section is between the first section and at least one of the source or drain. The first nanowire includes a channel when a voltage is applied to the gate electrode.
Claims17
A semiconductor device, comprising:
- a substrate;
- a nanowire extending in a first direction on the substrate;
- a gate electrode surrounding a periphery of the nanowire and extending in a second direction intersecting with the first direction;
- and
- a gate spacer formed on a side surface of the gate electrode, wherein
- the nanowire includes a first center region overlapping the gate electrode and a first side region overlapping the gate spacer,
- a first thickness of the first center region is different from a second thickness of the first side region,
- the gate spacer includes an outer spacer, which is in contact with a side surface of the first side region, and an inner spacer, which is in contact with a lower surface or an upper surface of the first side region,
- a width of the inner spacer decreases as a distance from the gate electrode decreases, and
- a width of the first side region along a direction normal to the substrate decreases as a distance from the gate electrode increases.
7 more elements
A semiconductor device, comprising:
- a substrate;
- a nanowire extending in a first direction on the substrate;
- a gate electrode surrounding a periphery of the nanowire and extending in a second direction intersecting with the first direction;
- and
- a gate spacer formed on a side surface of the gate electrode, wherein
- the nanowire includes a first center region overlapping the gate electrode and a first side region overlapping the gate spacer,
- a first thickness of the first center region is different from a second thickness of the first side region,
- the gate spacer includes a first inner spacer, which is in contact with a lower surface of the first side region, and a second inner spacer, which is in contact with an upper surface of the first side region,
- a distance between the first inner spacer and the second inner spacer increases as a distance from the gate electrode decreases, and
- a width of the first side region along a direction normal to the substrate decreases as a distance from the gate electrode increases.
7 more elements
Dependencies are inferred from the claim text.