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US 11,004,985 B2Granted
Semiconductor device having multi-thickness nanowire
AssigneeSamsung Electronics Co., Ltd.
InventorsSeung Hun Lee, Dong Woo Kim, Dong Chan Suh, Sun Jung Kim
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Abstract
A semiconductor device includes a drain, a source, a gate electrode, and a nanowire between the source and drain. The nanowire has a first section with a first thickness and a second section with a second thickness greater than the first thickness. The second section is between the first section and at least one of the source or drain. The first nanowire includes a channel when a voltage is applied to the gate electrode.
Claims20
A semiconductor device, comprising:
- a substrate;
- a plurality of nanowires extending in a first direction and spaced apart from each other on the substrate, the plurality of nanowires includes a first nanowire which is an uppermost nanowire of the plurality of nanowires;
- a gate electrode surrounding a periphery of the plurality of nanowires and extending in a second direction intersecting with the first direction;
- and
- a gate spacer on opposite sides of the gate electrode,
- wherein the first nanowire includes:
- a first center region overlapping the gate electrode;
- and
- a first side region overlapping the gate spacer, on opposite sides of the first center region,
- wherein a first thickness of the first center region is smaller than a second thickness of the first side region.
7 more elements
A semiconductor device, comprising:
- a substrate;
- a plurality of nanowires extending in a first direction and spaced apart from each other on the substrate, the plurality of nanowires includes a first nanowire which is an uppermost nanowire of the plurality of nanowires;
- a gate electrode surrounding a periphery of the plurality of nanowires and extending in a second direction intersecting with the first direction;
- and
- a gate spacer on opposite sides of the gate electrode,
- wherein the first nanowire includes:
- a first center region overlapping the gate electrode;
- and
- a first side region overlapping the gate spacer, on opposite sides of the first center region,
- wherein a first height of an upper surface of the first center region is different from a second height of an upper surface of the first side region.
7 more elements
A semiconductor device, comprising:
- a substrate;
- a first nanowire extending in a first direction on the substrate;
- a gate electrode surrounding a periphery of the first nanowire and extending in a second direction intersecting with the first direction;
- a source/drain on opposite sides of the gate electrode and on the substrate;
- a gate spacer between gate electrode and the source/drain;
- and
- a gate insulating film between the first nanowire and the gate electrode and between the gate spacer and the gate electrode,
- wherein the first nanowires includes:
- a center region overlapping the gate electrode;
- and
- a side region overlapping the gate spacer, on opposite sides of the center region,
- wherein a first thickness of the first center region is smaller than a second thickness of the first side region,
- wherein a first height of an upper surface of the first center region is lower than a second height of an upper surface of the first side region,
- wherein the gate spacer includes an outer spacer in contact with a side surface of the first nanowire, and an inner spacer in contact with a lower surface of the first nanowire, and
- wherein the gate spacer includes a concave side surface adjacent to the source/drain.
12 more elements
Dependencies are inferred from the claim text.