Y10S 438/936
Graded energy gap
Y10S438/936 (Graded energy gap) appears on 110 US grants and 26 published applications in this corpus.
Search patents in Y10S- Granted patents
- 110
- Published applications
- 26
- Assignees
- 65
- Inventors
- 220
- Latest grant
- 26 Dec 2017
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 3 | 0 |
| 1977 | 3 | 0 |
| 1978 | 4 | 0 |
| 1979 | 3 | 0 |
| 1980 | 6 | 0 |
| 1981 | 1 | 0 |
| 1982 | 1 | 0 |
| 1983 | 1 | 0 |
| 1984 | 2 | 0 |
| 1985 | 3 | 0 |
| 1986 | 4 | 0 |
| 1987 | 0 | 0 |
| 1988 | 4 | 0 |
| 1989 | 4 | 0 |
| 1990 | 5 | 0 |
| 1991 | 2 | 0 |
| 1992 | 2 | 0 |
| 1993 | 6 | 0 |
| 1994 | 9 | 0 |
| 1995 | 6 | 0 |
| 1996 | 3 | 0 |
| 1997 | 3 | 0 |
| 1998 | 3 | 0 |
| 1999 | 1 | 0 |
| 2000 | 4 | 0 |
| 2001 | 0 | 0 |
| 2002 | 3 | 5 |
| 2003 | 0 | 3 |
| 2004 | 8 | 4 |
| 2005 | 1 | 2 |
| 2006 | 1 | 2 |
| 2007 | 2 | 4 |
| 2008 | 1 | 1 |
| 2009 | 4 | 1 |
| 2010 | 2 | 0 |
| 2011 | 1 | 2 |
| 2012 | 2 | 1 |
| 2013 | 0 | 0 |
| 2014 | 0 | 0 |
| 2015 | 1 | 1 |
| 2016 | 0 | 0 |
| 2017 | 1 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- Resistive switching in memory cells26 Dec 2017US 9,853,212 B2Micron Technology, Inc.
- Resistive switching in memory cells10 Feb 2015US 8,951,829 B2Micron Technology, Inc.
- Light-emitting diode and method for fabrication thereof10 Jul 2012US 8,217,405 B2Showa Denko K. K.
- Field effect transistor with a heterostructure31 Jan 2012US 8,106,424 B2Infineon Technologies AG
- Light-emitting diode and method for fabrication thereof4 Jan 2011US 7,863,630 B2Showa Denko K. K.
- Resistive switching in memory cells21 May 2015US 2015/0137063 A1Micron Technology, Inc.
- Resistive switching in memory cells4 Oct 2012US 2012/0248396 A1Micron Technology, Inc.
- Light-emitting diode and method for fabrication thereof17 Mar 2011US 2011/0062413 A1Showa Denko K. K.
- Field effect transistor with a heterostructure10 Feb 2011US 2011/0031530 A1Infineon Technologies AG
- Field effect transistor with a heterostructure and associated production method14 May 2009US 2009/0121289 A1Infineon Technologies AG
Most cited
By later US patents
- SixSnyGe1-x-y and related alloy heterostructures based on Si, Ge and Sn521US 7,598,513 B2Arizona Board of Regents, Acting for and on Behalf of Arizona State University, A Corporate Body Organized Under Arizona Law · 2009
- Method for fabricating a semiconductor device and a substrate processing apparatus384US 6,686,281 B2Hitachi Kokusai Electric Inc. · 2004
- Process for forming retrograde dopant distributions utilizing simultaneous outdiffusion of dopants167US 4,578,128 ANCR Corporation · 1986
- Si/SiGe vertical junction field effect transistor123US 5,714,777 AInternational Business Machines Corporation · 1998
- Field effect transistor with a heterostructure118US 8,106,424 B2Infineon Technologies AG · 2012