Resistive switching in memory cells
AssigneeMicron Technology, Inc.
InventorsD.V. Nirmal Ramaswamy, Gurtej S. Sandhu
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Abstract
Methods, devices, and systems associated with oxide based memory can include a method of forming a resistive switching region of a memory cell. Forming a resistive switching region of a memory cell can include forming a metal oxide material on an electrode and forming a metal material on the metal oxide material, wherein the metal material formation causes a reaction that results in a graded metal oxide portion of the memory cell.
Claims18
A method of forming a resistive switching region of a memory cell, comprising:
- forming a metal oxide material on an electrode;
- and
- forming a metal material on the metal oxide material, wherein the formation causes a reaction with the metal oxide material, wherein the reaction results in both a graded metal oxide portion of the memory cell and a reacted metal oxide portion of the memory cell at an interface between the metal oxide material and the metal material.
A method of forming a resistive switching region of a memory cell comprising:
- forming a metal oxide material using an atomic layer deposition process;
- forming a metal material on the metal oxide material using a plasma enhanced chemical vapor deposition process, wherein the formation causes a reaction with the metal oxide material, wherein the reaction results in both a graded metal oxide portion of the memory cell and a reacted metal oxide portion of the memory cell at an interface between the metal oxide material and the metal material.
A method of forming a memory cell structure, comprising:
- forming a metal oxide material on a first electrode;
- and
- forming a metal material on the metal oxide material, wherein at least a portion of the metal material reacts with the metal oxide material to form both a graded metal oxide portion of the memory cell and a reacted metal oxide portion of the memory cell at an interface between the metal oxide material and the metal material.
Dependencies are inferred from the claim text.