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US 9,853,212 B2Granted
Resistive switching in memory cells
AssigneeMicron Technology, Inc.
InventorsD. V. Nirmal Ramaswamy, Gurtej S. Sandhu
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Abstract
Methods, devices, and systems associated with oxide based memory can include a method of forming a resistive switching region of a memory cell. Forming a resistive switching region of a memory cell can include forming a metal oxide material on an electrode and forming a metal material on the metal oxide material, wherein the metal material formation causes a reaction that results in a graded metal oxide portion of the memory cell.
Claims18
A memory cell, comprising:
- a metal oxide material formed on a first electrode;
- a second electrode material formed on the metal oxide material, wherein the formation causes a reaction between the second electrode material and the metal oxide material;
- a graded metal oxide portion of the memory cell formed at an interface between the metal oxide material and the second electrode material as a result of the second electrode material reacting with the metal oxide material and exhibiting resistance switching characteristics;
- and
- a reacted metal oxide portion of the memory cell between the second electrode material and the graded metal oxide portion formed as a result of the reaction,
- wherein the second electrode material is reactive with respect to the metal oxide material and the reaction is associated with an in situ deposition process.
3 more elements
A memory cell, comprising:
- an atomic layer deposited titanium dioxide material formed on a first electrode;
- a plasma enhanced chemical vapor deposited titanium material formed on the titanium dioxide material, wherein the formation causes a reaction between the titanium material and the titanium dioxide material;
- a resistive switching region formed at an interface between the titanium dioxide material and the titanium material as a result of the titanium material reacting with the titanium dioxide material;
- and
- a reacted titanium dioxide portion of the memory cell formed between the resistive switching region and a second electrode as a result of the reaction,
- wherein the plasma enhanced chemical vapor deposited titanium material is reactive with respect to the atomic layer deposited titanium dioxide material and the reaction is associated with an in situ deposition process.
3 more elements
A memory cell, comprising:
- a metal oxide material on a first electrode;
- a metal material formed on the metal oxide material, wherein the formation causes a reaction between the metal material and the metal oxide material;
- and
- a resistive, substoichiometric graded metal oxide portion of the memory cell and a reacted metal oxide portion of the memory cell formed at an interface between the metal oxide material and the metal material as a result of the reaction,
- wherein the metal material is reactive with respect to the metal oxide material and the reaction is associated with an in situ deposition process.
2 more elements
Dependencies are inferred from the claim text.